STF57N65M5 Allicdata Electronics
Allicdata Part #:

497-13103-5-ND

Manufacturer Part#:

STF57N65M5

Price: $ 8.51
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V 42A TO-220FP
More Detail: N-Channel 650V 42A (Tc) 40W (Tc) Through Hole TO-2...
DataSheet: STF57N65M5 datasheetSTF57N65M5 Datasheet/PDF
Quantity: 6
1 +: $ 8.51130
10 +: $ 8.25596
100 +: $ 8.08574
1000 +: $ 7.91551
10000 +: $ 7.66017
Stock 6Can Ship Immediately
$ 8.51
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Series: MDmesh™ V
Rds On (Max) @ Id, Vgs: 63 mOhm @ 21A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STF57N65M5 is a type of power MOSFET, commonly referred to as a single N-channel enhancement mode vertical DMOS power transistor. The STF57N65M5 transistor has a variety of uses and applications, but is mainly designed for power switching applications in the automotive, commercial, and industrial sectors. It is used in various applications such as power supplies, motor control, ignition control, and even solar power systems.

The STF57N65M5 MOSFET is a P-type silicon-based transistor with an operating voltage of 500V and a maximum Drain-Source voltage of 650V. It has a current rating of 28A and a maximum RDSon of 6.5mohm. It also has a low gate charge and a fast switching speed, which makes it an appealing choice for specific power applications. The STF57N65M5 is also very common in microprocessors and other electronic applications that require an optimized field-effect level.

The working principle of the STF57N65M5 is quite simple. A voltage applied to the gate terminal creates a channel between the source and the drain. This channel can be used to regulate the flow of electric current through the MOSFET transistor. The amount of electric current that is allowed to pass through the transistor is regulated by the voltage applied to the gate terminal. Therefore, the gate voltage can be used to adjust the level of current passing through the MOSFET.

The STF57N65M5 can be used in a variety of high power applications, thanks to its high maximum drain current rating. It can be used as an electronic switch, as a linear amplifier, or even as a boost regulator. The STF57N65M5 can also be used in DC-DC converters, in-situ process control, and circuit protection. It is also suitable for a variety of high-frequency power switching applications, such as those found in wireless transmitters and wireless receivers.

The STF57N65M5 is a versatile and powerful transistor, which makes it a popular choice for applications where high power switching is needed. It can be used in a variety of scenarios, from small-scale industrial applications to large-scale automotive applications. Thanks to its high current rating and low gate charge, the STF57N65M5 can be used in a variety of applications, making it a useful and reliable option.

The specific data is subject to PDF, and the above content is for reference

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