STF5N80K5 Allicdata Electronics
Allicdata Part #:

497-16962-ND

Manufacturer Part#:

STF5N80K5

Price: $ 1.29
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: N-CHANNEL 800 V, 1.50 OHM TYP.,
More Detail: N-Channel 800V 4A (Ta) 20W (Tc) Through Hole TO-22...
DataSheet: STF5N80K5 datasheetSTF5N80K5 Datasheet/PDF
Quantity: 1000
1 +: $ 1.29000
10 +: $ 1.25130
100 +: $ 1.22550
1000 +: $ 1.19970
10000 +: $ 1.16100
Stock 1000Can Ship Immediately
$ 1.29
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 20W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Series: MDmesh™
Rds On (Max) @ Id, Vgs: 1.75 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STF5N80K5 is an N-Channel improvement of the FETs family. It is commonly used for many high voltage, high current and low-noise applications. Additionally, the STF5N80K5 is well-suited for circuit design in electronic communication systems and computer peripherals. The well-known STF5N80K5 power MOSFET is a cost-effective high voltage, moderate-current device. This high performance MOSFET offers a very low on-resistance and a wide variety of package options and operational modes.

STF5N80K5 is an N-Channel power MOSFET. This single MOSFET is a part of the STF5N80K series of discrete semiconductor devices. It is suitable for high power switching and amplification applications. This transistor is constructed using Metal Oxide Semiconductor technology. It is designed to operate with high input impedance and low on-resistance. The features of this device include reverse polarity protection and the ability to handle high voltages and high currents.

The working principle of the STF5N80K5 is based on the basic operation of an FET. A FET is basically a device that utilizes a voltage applied to its gate to control the currents that flow through the device. When a voltage is placed on its gate, it creates an electric field. This electric field then modifies the shape and width of a channel that is formed in the depletion region of the FET. The current that flows through this channel is determined by the size of this channel. A large electric field will create a large amount of current flow, while a small electric field will create a small amount of current flow.

In the case of the STF5N80K5, the channel is formed by N-Channel MOSFET technology. This device utilizes negative (N-Channel) charges on its gate to restrict the current flow by closing the channel. The current is prevented from flowing until the negative charge is removed. When the negative charge is removed, the channel opens and allows current flow. This current flow is regulated by the gate voltage applied to the device. When a higher voltage is applied, the current flow increases.

The STF5N80K5 can be used in many applications. These applications include switching circuits, switching amplifiers, logic control circuits, and high-voltage circuits. It is also commonly used in high-current applications, such as motor control, power supplies, and automotive applications. It is well suited for low-noise applications, such as audio amplifiers and sound systems. The STF5N80K5 is one of the most versatile and reliable FETs on the market today.

The STF5N80K5 is an excellent choice for many applications. It is suitable for high voltage, high current, and low-noise applications. This device is constructed using Metal Oxide Semiconductor technology, and it is designed to operate with high input impedance and low on-resistance. The STF5N80K5 can be used in many different applications and is a cost-effective solution for many high power and high current needs.

The specific data is subject to PDF, and the above content is for reference

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