STF5N62K3 Allicdata Electronics
Allicdata Part #:

497-12583-5-ND

Manufacturer Part#:

STF5N62K3

Price: $ 1.63
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 620V 4.2A TO220FP
More Detail: N-Channel 620V 4.2A (Tc) 25W (Tc) Through Hole TO-...
DataSheet: STF5N62K3 datasheetSTF5N62K3 Datasheet/PDF
Quantity: 980
1 +: $ 1.63000
10 +: $ 1.58110
100 +: $ 1.54850
1000 +: $ 1.51590
10000 +: $ 1.46700
Stock 980Can Ship Immediately
$ 1.63
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Series: SuperMESH3™
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Drain to Source Voltage (Vdss): 620V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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Introduction

STF5N62K3 is a type of Field Effect Transistor (FET) which utilizes MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) technology. It is part of the single MOSFET family, which is characterized as having only one capability at any given time. A FET has a gate and two terminals connected to a channel, which serves as the main controlling element. STF5N62K3 has an optimal range of current of 0.20A and an optimal drain-source breakdown voltage of 500V. This transistor is typically manufactured in an epoxy plastic casing, with a length of 11mm and a width of 5mm

Application Field

Due to its capability to provide excellent audio/power performance and its high functional reliability, the STF5N62K3 is used in a wide variety of applications, both in commercial settings and in industrial settings. It is commonly used in motor control, automotive, and power switching. Additionally, it is widely used in high frequency power conversion, as well as analog and digital switching. Since STF5N62K3 is temperature and shock resistant, it also finds use in applications which require a high level of security, such as medical equipment, communication devices, and military applications.

Working Principle

The working principle of STF5N62K3 is based on the phenomenon known as electron flow. Electrons flow from the source to the drain when a voltage is applied to the gate. This flow can be modulated by the gate voltage. When the gate voltage is changed, the ability of electrons to pass through the channel is altered. This alteration affects the current between the drain and the source. This ability to modulate the current makes STF5N62K3 an ideal device for voltage-controlled current sources. This is why STF5N62K3 is used in applications requiring high-frequency power conversion, such as motor control, automotive, and power switching.

Conclusion

To conclude, STF5N62K3 is a type of Field Effect Transistor (FET) which utilizes MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) technology. It is part of the single MOSFET family, and is characterized by its high functional reliability, optimal current range of 0.20A, and its optimal drain-source breakdown voltage of 500V. STF5N62K3\'s application field is wide-ranging, with uses including motor control, automotive, and power switching, as well as high frequency power conversion, analog and digital switching, etc. Its working principle is based on the phenomenon of electron flow, and its modulation is done through altering the gate voltage to control the current between the drain and the source.

The specific data is subject to PDF, and the above content is for reference

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