Allicdata Part #: | 497-10405-5-ND |
Manufacturer Part#: |
STF5N95K3 |
Price: | $ 2.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 950V 4A TO220FP |
More Detail: | N-Channel 950V 4A (Tc) 25W (Tc) Through Hole TO-22... |
DataSheet: | STF5N95K3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 2.09790 |
50 +: | $ 1.69357 |
100 +: | $ 1.52416 |
500 +: | $ 1.18546 |
1000 +: | $ 0.98224 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 460pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | SuperMESH3™ |
Rds On (Max) @ Id, Vgs: | 3.5 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 950V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STF5N95K3 is a single N-channel field effect transistor (FET) device in a insulated-gate FET (IGFET) package. It is a voltage-controlled transistor, ideally suited for high voltage switching applications.
The STF5N95K3 is characterized by its large drain current, low on-resistance, and excellent gate-source and gate-drain capacitances, making it ideal for high frequency and wide voltage range applications. This device is rated for operating temperature range of -55°C to +150°C and is built in standard TO-220 packages.
The STF5N95K3 contains two basic components: an insulated-gate field effect transistor (IGFET) and a bypass diode. An IGFET is a three-terminal device that functions like a switch, whereas the bypass diode provides a backup path for the current in cases of high-voltage surges.
The main components of the STF5N95K3 are its gate terminal, its drain terminal, and its source terminal. The insulated-gate field effect transistor functions like a switch. Applying a voltage to the gate terminal will open or close the device and allow current to flow though or not to flow through. The voltage applied to the gate creates an electrical field which in turn controls the flow of current in the device.
The source terminal of the device is connected to the ground. It provides a reference point for the gate voltage as well as serves as the current return path for the source current. The drain terminal is the output of the device and its voltage level will determine the drain current.
The STF5N95K3 is able to work in frequencies up to 10 MHz and is largely used in switch mode power supplies (SMPS) and relay drivers. It is also ideal for the control of high power loads such as motor starters, heating elements, and lamp drivers.
The operating voltage range of the STF5N95K3 is 7 to 25 volts, so it can be used in a variety of applications. It has an excellent on-resistance when compared to other single N-channel FETs and is able to handle high voltage surges. The device is also able to handle high switching currents and its drain-source dielectric withstanding voltage is rated at 500 volts.
The STF5N95K3 is designed for a wide range of high voltage DC applications such as motor control, lamp drivers, direct AC motor drives, switch mode power supplies and high voltage switching applications. It is also used for applications like relay drivers, thyristor and transistor trigger circuits, and high voltage power supplies.
The STF5N95K3 is a popular choice for high voltage applications due to its excellent performance and its ability to handle high voltage surges. The device is reliable and long-lasting, and its rated operating temperature range makes it suitable for a variety of industrial applications. It is also cost effective because of its high current-carrying capability and its small size.
The specific data is subject to PDF, and the above content is for reference
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