STF5NK100Z

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The STF5NK100Z is a field-effect transistor (FET) specifically designed for power switching applications. It is a high power, low on-resistance, N-Channel MOSFET packaged in a TO-220 housing. The device has a rated drain-to-source voltage (Vds) of 100V, a maximum drain current (Id) of 20A, and a maximum power dissipation (Pd) of 130W. It is particularly suitable for switching medium and high-power supplies and motor drives, as well as in general-purpose switching and power circuit applications.

A FET is essentially an electronically controlled switch which can be used to control the flow of current between two points. It consists of a source, a drain, and a gate. The source and drain terminals are connected to either end of the semiconductor channel through which current flows. The gate terminal acts as a voltage-controlled switch, allowing a small current to the source or drain terminals to control the flow of current between the source and drain terminals.

The STF5NK100Z is a N-Channel MOSFET. As the name suggests, it has an N-shaped semiconductor channel and is typically used as a switch or amplifier. The device is constructed from insulated gate field-effect transistors (IGFETs) which are typically used to amplify, control, and switch high-power loads in a more energy-efficient manner than traditional bipolar junction transistors (BJTs). When the device is turned on, the gate voltage is increased, allowing current to flow between the source and drain terminals. The current then continues to flow until the gate voltage is decreased, thus turning the device off.

The STF5NK100Z, being a power MOSFET, has particularly low on-resistance when compared to regular MOSFETs. The device has an Rds(on) of 0.012 as per the official datasheet — this rating indicates that the device has very low resistance when on, which means that it is highly efficient and will dissipate very little power when in use. The device has a maximum drain current of 20A, meaning that it is suitable for power switching applications such as motor control, power supplies, and general-purpose switching circuits.

The STF5NK100Z has a maximum power dissipation of 130W, making it suitable for medium and high-power switching applications. The device is also designed with built-in thermal protection, which helps to prevent excessive heat buildup and damage to the device. The device is also provided in a robust TO-220 housing, making it ideal for use in industrial and commercial applications.

In summary, the STF5NK100Z is a high power, low on-resistance N-Channel MOSFET specifically designed for power switching applications. The device has a maximum drain current of 20A and a maximum power dissipation of 130W, making it suitable for medium and high-power switching applications. Additionally, the device has a built-in thermal protection feature and is provided in an industrial-strength TO-220 housing.

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