STH310N10F7-2

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STH310N10F7-2 is a device from STMicroelectronics that is part of the N-channel enhancement mode vertical DMOS FET series. The STH310N10F7-2 is a general purpose FET that is often used for control, signal and power switching applications, as it offers high performance, with low on-resistance and robustness.

The STH310N10F7-2 has a maximum drain current of 310 A and a drain-source voltage of 100 V. It has a package size of just 1.8 x 1.1 x 0.5mm and an ultra-small body size, making it an attractive option for many applications, including those with space restrictions. The maximum junction temperature is rated at 175°C and the device is housed in a SOT-23 package. Its breakdown voltage rating is 40 V.

The STH310N10F7-2 is ideal for use in switching power supplies, computers, telecom and automotive applications. As well as low on-resistance and fast switching, the device also provides excellent thermal stability, ESD protection and low gate-charge. The STH310N10F7-2 also has an improved surface-mount capability and is compatible with existing packages, making it ideal for use in a variety of existing circuits.

The STH310N10F7-2 is a vertical double-diffused MOSFET (VDMOS) with an improved gate-to-emitter junction that is designed to replace power bipolar transistors (BJT) in low-voltage circuits. The MOSFET has a higher gate-to-drain coupling coefficient than JFETs, providing greater switching speed and higher efficiency. Additionally, it also requires less gate drive voltage and has a lower on-state voltage drop.

The STH310N10F7-2 has a body diode with a high reverse blocking voltage, up to 100 V and a reverse current rating of up to 50mA. The junction Zener diode, which is characteristic of the VDMOS and is typical of this device, helps to prevent the voltage drop of the output current and provides breakdown protection.

In addition, the STH310N10F7-2 has a unique package design which helps to reduce the overall footprint and weight of the device. The SMT technology used for the device reduces the lead inductance and thermal resistance and increases power supply efficiency. This helps to maximize the device’s ability to switch high current loads without generating large amounts of heat.

To conclude, the STH310N10F7-2 is an ideal choice for a wide range of applications. Its low on-resistance, high performance, and efficient thermal management make it an attractive solution for many power supply, computer, and automotive components. Furthermore, its ultra-small body size, coupled with its SMT technology, makes the device a great candidate for use in applications with space restrictions.

The specific data is subject to PDF, and the above content is for reference