| Allicdata Part #: | 497-13875-2-ND |
| Manufacturer Part#: |
STH320N4F6-2 |
| Price: | $ 2.01 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 40V 200A H2PAK-2 |
| More Detail: | N-Channel 40V 200A (Tc) 300W (Tc) Surface Mount H²... |
| DataSheet: |  STH320N4F6-2 Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 1.82574 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab) Variant |
| Supplier Device Package: | H²PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 300W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 13800pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 240nC @ 10V |
| Series: | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI |
| Rds On (Max) @ Id, Vgs: | 1.3 mOhm @ 80A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 200A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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Application Fields
The STH320N4F6-2 is mainly used in power switching applications, such as DC-DC converters, power converters, and AC/DC converters. Furthermore, it is also applied in high precision instrumentation circuits as well as in motor drivers, LED drivers, and LED displays. In addition, it also finds utility in high power audio amplifiers, automotive systems, and semi-conductors.
Working Principle of STH320N4F6-2
The STH320N4F6-2 is a type of P-channel MOSFET, which is a type of transistor that is composed of four layers: the source, drain, and gate. The source and drain are interconnected and the gate is used to switch the flow of current between them. When a positive voltage is applied to the gate, a channel is created between the source and drain and current is allowed to flow through it. When the voltage is removed, the channel is closed and current cannot flow.
In order to understand its working principle, you must first understand the concept of the threshold voltage. This is the amount of voltage that is required to open the gate and allow current to flow. The threshold voltage of the STH320N4F6-2 is 4V and it requires a gate bias voltage of 2-8V. When the gate bias voltage is applied, an electric field is created and this causes the electrons in the drain region to move towards the gate. This results in an inversion layer forming between the source and drain and allowing a current to flow.
The STH320N4F6-2 also has a very low on-state resistance, which allows it to handle high amounts of current and power. The on-state resistance is only 2.5mΩ, which is much lower than the other types of MOSFETs. This makes it an ideal choice for power switching applications that require high currents.
Conclusion
To sum up, the STH320N4F6-2 is a type of small-signal P-channel MOSFET that is used in many power switching applications. It has an on-state resistance of only 2.5mΩ, which makes it very suitable for high current applications. Furthermore, it has a threshold voltage of 4V, which requires a gate bias voltage of 2-8V for it to operate properly.
The specific data is subject to PDF, and the above content is for reference
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