Allicdata Part #: | 497-13838-2-ND |
Manufacturer Part#: |
STH320N4F6-6 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 40V 200A H2PAK-6 |
More Detail: | N-Channel 40V 200A (Tc) 300W (Tc) Surface Mount H2... |
DataSheet: | STH320N4F6-6 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab) |
Supplier Device Package: | H2PAK-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 13800pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 240nC @ 10V |
Series: | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI |
Rds On (Max) @ Id, Vgs: | 1.3 mOhm @ 80A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 200A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STH320N4F6-6 is a type of field-effect transistor (FET) usually positioned within a semiconductor device. This type of transistor has multiple applications and utilizes its working principle to perform its varied functions. STH320N4F6-6 belongs to the single type of field-effect transistors (FETs) and can be classified within the category of MOSFETs.
The FET is a type of transistor which utilizes an electric field to create an action within the transistor. In the case of FETs, there are three types which are utilized. These include the Junction Field-Effect Transistor (JFET), the Metal-Oxide-Silicon Field-Effect Transistor (MOSFET) and the Insulated Gate Bipolar Transistor (IGBT). The STH320N4F6-6 belongs to the MOSFET category due to its operating principle.
The STH320N4F6-6 MOSFET utilizes a structure which is appropriate in many electronic applications due to its mechanical construction that is relatively small in comparison to other types of transistors. The main features that make this type of MOSFET an ideal choice for many applications include its low capacitance, low power consumption, low gate to drain capacitance, and its increased protection against electro-static discharge (ESD). This MOSFET is also able to safely power higher voltages, making it an apt choice for many applications.
The working principle of the MOSFET is based upon a simple principle that is based on the flow of electricity through a gate terminal. When a voltage applied to a gate terminal, a corresponding electric field is created that increases or decreases the conduction of electrons through the channels below the gate. This then determines the current that is passed through the transistor. As a result, the FET is able to effectively translate an electrical signal from the input terminal to the output terminal based on the amount of current that would pass through the transistor.
The STH320N4F6-6 MOSFET makes use of the enhanced protection of electro-static discharge (ESD) to create an insulated layer between the gate and the drain region, thus allowing for safe operation with higher voltages. In addition, this MOSFET also has low power consumption and has low gate to drain capacitance, thus making it suitable for many applications.
The primary applications of the STH320N4F6-6 MOSFET include logic interfacing, power management, amplifier and audio, and multiple system and signal switching. These types of transistors are often used in applications such as motor control, digital and analog switching, and power supply circuits. Furthermore, due to its high density, this type of MOSFET is ideal for use in high frequency applications such as in mobile phones and tablets.
In conclusion, the STH320N4F6-6 MOSFET is a great choice for many applications due to its low power consumption, low gate to drain capacitance, and its increased protection against ESD. This MOSFET is ideal for use in applications such as motor control, digital and analog switching, and power supply circuits. Furthermore, this type of MOSFET can also be used in audio, amplifier and power management applications, thus making it a useful choice for many technical applications.
The specific data is subject to PDF, and the above content is for reference
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