STH3N150-2 Allicdata Electronics
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Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 1500V 2.5A H2PAK-2
More Detail: N-Channel 1500V 2.5A (Tc) 140W (Tc) Surface Mount ...
DataSheet: STH3N150-2 datasheetSTH3N150-2 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Series: PowerMESH™
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1500V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 9 Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29.3nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 939pF @ 25V
FET Feature: --
Power Dissipation (Max): 140W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: H²PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant

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STH3N150-2 is a vertical double-diffused Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a highly reliable and stable device with low power consumption and has a small total gate charge.

The device is a self-driven field effect transistor with a small size and low on resistance compared to traditional FETs. It can be used for a wide range of applications including switch mode power supplies, motor control, and general purpose switching. The STH3N150-2 has an excellent thermal resistance and leakage characteristics, making it perfect for high power applications.

The working principle of STH3N150-2 is based on the physical effect of conduction. It is a voltage-controlled device, meaning its conduction level is determined by the amount of voltage applied to its gate relative to its electrons. The device is designed with an insulated gate, a body terminal and drain terminals.

When a positive voltage is applied to the gate terminal, the device is turned on, allowing current to flow from its source terminal to its drain terminal. This is done by drawing electrons from the gate terminal to the body, which enhances current conduction. In contrast, a negative voltage to the gate terminal turns the device off, stopping current flow from the source to the drain.

Due to its low on resistance and high current-handling capabilities, the STH3N150-2 is ideal for a variety of applications. These include high current switching, high speed switching, Class D audio amplifiers, and DC/DC converters. In addition, its small size and low power dissipation make it perfect for high heat applications.

The device is also designed to have excellent thermal resistance, making it ideal for applications requiring high heat and low power dissipation. It also has excellent noise immunity, making it perfect for precision control applications.

In conclusion, the STH3N150-2 is a reliable, high performance device that is ideal for a variety of applications. Its small size and low on resistance make it perfect for high power and high heat applications, while its excellent noise immunity makes it perfect for precision control applications. Its robust design and reliability make it a reliable device for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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