STH360N4F6-2

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	H2Pak-2
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	17930pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	340nC @ 10V
Series:	DeepGATE™, STripFET™ VI
Rds On (Max) @ Id, Vgs:	1.25 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	180A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

STH360N4F6-2 is a high quality transistor commonly used in advanced electronic applications. The product belongs to the family of transistors, field effect transistors (FETs), and MOSFETs (metal-oxide-semiconductor field-effect transistors). In particular, it is a type of single transistor, that is, a single active device. It is constructed using three terminals: a source, gate, and drain with a silicon semiconductor as its substrate.

Applications of STH360N4F6-2

The STH360N4F6-2 can be used in a variety of applications in advanced electronics. Its small dimensions and low power consumption make it very attractive in applications that require electrical design optimization. Due to its high switching speed, STH360N4F6-2 is suitable for high density integrated circuit applications. With its excellent thermal performance, this product is well suited for high-power switch mode power supply. It has low output capacitance, making it an excellent choice for driving higher frequency signals. Further, it is capable of providing switch control for driving high voltage electricity.

Functions of STH360N4F6-2

The STH360N4F6-2 is also capable of regulating current in circuits, making it suitable for motor control applications. It can offer current amplification, allowing higher levels of current to be controlled, making it an ideal choice for power amplifier applications. Further, this product can act as a controller for analog circuits for amplifies, oscillators, and A/D converters. It is also very well suited for application involving smart switch, such as adjusting brightness of LED backlight.

Working Principles of STH360N4F6-2

STH360N4F6-2 is a type of Field Effect Transistor (FET) which works based on the principle of ‘field effect’. In FETs, an electric field is created around the central gate terminal, which can either turn on or off the current flow in the transistor. The STH360N4F6-2 is constructed using a silicon semiconductor as its substrate. The junction of the source and drain terminals of the transistor form the channel. The applied voltage level across the gate and source terminals controls the current flow through the channel. When the gate voltage increases, the electron flow increases, and the transistor conducts more current. The gate voltage can be used to adjust the current flow between the source and drain terminals of the transistor. The FETs also have a very low gate capacitance, which means that they do not require a lot of power to achieve good results. On the other hand, the conventional bipolar junction transistors require higher current levels and have higher power consumption. When used properly, STH360N4F6-2 offers a better performance for a lesser power consumption. The STH360N4F6-2 is also considered to be a low-noise device, making it suitable for use in a wide range of analog and digital circuits. Its low noise characteristics mean that it can effectively detect very small signals.

Conclusion

STH360N4F6-2 is a versatile product which has been specifically designed for use in advanced electronic applications. It is an excellent choice for a wide range of applications, such as power amplifiers, motor control, and LED backlight control. Its low power consumption, small size, and high switching speed are additional attractions. Working on the principle of field effect, its channel is used to control the current flow between the source and drain terminals of the transistor. Its low capacitance, make it a preferred choice when looking to drive higher frequency signals.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description