STH310N10F7-6 Discrete Semiconductor Products |
|
Allicdata Part #: | 497-13586-2-ND |
Manufacturer Part#: |
STH310N10F7-6 |
Price: | $ 2.82 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 100V 180A H2PAK-2 |
More Detail: | N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H... |
DataSheet: | STH310N10F7-6 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 2.56256 |
Vgs(th) (Max) @ Id: | 3.8V @ 250µA |
Package / Case: | TO-263-7, D²Pak (6 Leads + Tab) |
Supplier Device Package: | H2PAK-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 315W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 12800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 180nC @ 10V |
Series: | DeepGATE™, STripFET™ VII |
Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The STH310N10F7-6 is a semiconductor device classified as a single MOSFET (Metal Oxide Semiconductor Field Effect Transistor). Its function in a circuit is to act as a switch, controlling the flow of current between two microphones.
The STH310N10F7-6 consists of three pins, a source, a drain and a gate. The device\'s pins are outlined on the packaging, provided by the manufacturer. The sources and drains of the device are connected to the power supply and the gate is connected to the controlling circuit or system.
When the gate of the STH310N10F7-6 is voltage, a current flow is established through the device. Depending upon the polarity of the applied gate voltage, either an accumulation or depletion mode is established. If the polarity is positive, then an accumulation mode is established and the current flow is ON. Conversely, if the polarity of the applied voltage is negative, then a depletion mode is established and the device is in the OFF state.
When the device is ON, a voltage drop is established across the gate-drain junction. This voltage drop is known as the threshold voltage of the device and is dependent on the type of MOSFET being used. The threshold voltage is an important parameter to consider when selecting a device, as the required supply voltage of the circuit increases with an increase in threshold voltage.
The STH310N10F7-6 is typically used in applications such as power supplies, audio amplifiers, switched mode power supplies and in power switching circuits. Due to its low on-resistance, high-frequency operation and high-speed switching capability, the device is also suitable for various motor control applications. In addition, the device can be used in various other applications, including motor control, voltage regulation and alternative energy systems.
The STH310N10F7-6 is a robust and powerful device and is a reliable option for various high power applications. The device has excellent temperature stability and low temperature coefficient characteristics, thus making it more reliable for applications involving a high temperature environment. The device is also known to have excellent ESD (electrostatic discharge) protection characteristics, which allows it to be used safely in hazardous environments.
Overall, the STH310N10F7-6 is an incredibly versatile and powerful single MOSFET which is capable of scaling with numerous applications. The device has excellent performance characteristics, making it an ideal choice for robust and reliable high power applications. It provides versatile operating modes and allows the user to customize the output current requirements while also offering superior temperature and ESD protection.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
STH300NH02L-6 | STMicroelect... | 1.66 $ | 1000 | MOSFET N-CH 24V 180A H2PA... |
STH320N4F6-2 | STMicroelect... | 2.01 $ | 1000 | MOSFET N-CH 40V 200A H2PA... |
STH320N4F6-6 | STMicroelect... | -- | 1000 | MOSFET N-CH 40V 200A H2PA... |
STH360N4F6-2 | STMicroelect... | -- | 1000 | MOSFET N-CH 40V 180A H2PA... |
STH310N10F7-2 | STMicroelect... | 2.71 $ | 1000 | MOSFET N-CH 100V 180A H2P... |
STH310N10F7-6 | STMicroelect... | 2.82 $ | 1000 | MOSFET N-CH 100V 180A H2P... |
STH315N10F7-2 | STMicroelect... | 2.3 $ | 1000 | MOSFET N-CH 100V 180A H2P... |
STH315N10F7-6 | STMicroelect... | -- | 1000 | MOSFET N-CH 100V 180A H2P... |
STH3N150-2 | STMicroelect... | -- | 1000 | MOSFET N-CH 1500V 2.5A H2... |
STH3 | Altech Corpo... | 1.6 $ | 1000 | HINGED STUD TERM M3 50A 6... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...