STH315N10F7-2

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STH315N10F7-2 is a N-channel enhancement mode MOSFET with extremely high input impedance and low on-state resistance. It is used in a wide range of applications, from home appliances to industrial circuits. It is ideal for applications that require high power efficiency, such as power switches and motor controllers.

Application Fields

STH315N10F7-2 can be used in many different application fields. In the electrical engineering field, this MOSFET is often used in power factor correction circuits, PFC driver, and active power controllers. In automotive systems, this MOSFET is often found in electric vehicles, fuel cells and hybrid electric vehicles, due to its high power efficiency and overload protection capability.

Additionally, STH315N10F7-2 can also be used in audio and video system for its low-noise signal circuit. In the consumer electronics sector, the MOSFET can be found in computers and home appliances, such as washing machines, dishwashers and air conditioners. In general, it is used as a general-purpose switching device, where its low on-state resistance and guaranteed up to 1.0A pulsed current are essential features.

Working Principle

STH315N10F7-2 are CMOS devices that consist of an N-channel enhancement-mode and a P-channel enhancement-mode field-effect transistor (FET). The two channels match each other and have the highest possible input impedance and lowest possible on-state resistance. Special design techniques are used for achieving power efficiency, fast switching speed and low power loss.

N-FET is used for switching purpose, and works as an ideal conducting channel, capable of controlling the amount of current that flows between the source and drain. It comprises of multiple gates which control the channel and a number of semiconductor fins provide vertical conduction. In the N-FET, when a negative voltage is applied to the gate terminal, depletion regions form and an inversion layer is created. This is effective in reducing the resistance of the channel and allowing current to flow freely.

P-FET works in the same way, but the opposite voltage polarities are required to create the depletion layer. The P-FET works like N-FET and is especially useful in power circuits, where low on-state resistance and high input impedance are important. When both transistors are connected properly, it forms a bi-directional switching configuration, capable of controlling current flow in both directions. The output capacity of STH315N10F7-2 is guaranteed up to 1.0A pulsed current. With its fast switching speed, low power loss and plenty of other features, STH315N10F7-2 is widely used in a range of applications.

The specific data is subject to PDF, and the above content is for reference