Allicdata Part #: | 497-13350-2-ND |
Manufacturer Part#: |
STL70N10F3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N CH 100V 82A PWRFLAT 5X6 |
More Detail: | N-Channel 100V 82A (Tc) 136W (Tc) Surface Mount Po... |
DataSheet: | STL70N10F3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 136W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3210pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Series: | STripFET™ III |
Rds On (Max) @ Id, Vgs: | 8.4 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 82A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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Introduction
TheSTL70N10F3 is a planar MOSFET transistor with applications in high-speed switching, active switching and saturated switching. This high voltage MOSFET is capable of operating up to 1000V and provides superior performance in both AC and DC circuits.
Application Field
TheSTL70N10F3 is mainly used in high-power switching applications with its superior performance in both AC and DC circuits. The device is also suitable for high-speed switching applications, active switching applications and saturated switching applications. It can be used in various power supply and power management applications such as DC/DC converter, battery charger and power controller. It is also suitable for motor control applications. Furthermore, it is suitable for use in portable electronic devices and automotive applications.
Working Principle
TheSTL70N10F3 has a metal-oxide-semiconductor field-effect transistor (MOSFET) structure, which is based on the conduction of electrons through a conducting layer between metal and oxide layers. The MOSFET has two gates, one gate for controlling the voltage across the device and the other gate for controlling the current carried by the device. The gates are used to control the flow of current in the device and are responsible for controlling the threshold voltage.
When the voltage at the gates is below the threshold voltage, the device is said to be in its off-state. In this state, no current is allowed to flow through the device. When the voltage at the gates is higher than the threshold voltage, the device is said to be in its on-state. In this state, current will flow through the device. The threshold voltage of the device is usually determined by the process of manufacture.
The STL70N10F3 is a N-Channel MOSFET, which means that when a positive voltage is applied to the gate of the device, current will flow from the source to the drain. It also means that the gate voltage can be used to control the flow of current in the device. The device also has a built-in diode, which helps in suppressing current spikes in the event of an inductive load.
The STL70N10F3 is also capable of operating in both linear and saturation modes. In linear mode, the current varies linearly with respect to the gate voltage, while in saturation mode, the current is determined by the saturation voltage of the device. The device can be used for high-power switching applications due to its low on-resistance and its high current handling capability.
Conclusion
Overall,the STL70N10F3 is a high voltage MOSFET with superior performance in both AC and DC circuits. It is mainly used in high-power switching applications with its low on-resistance and high current handling capability. It is also suitable for use in various power supply and power management applications. Lastly, it is suitable for use in portable electronic devices and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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