STL7NM60N

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The STL7NM60N is a sixth-generation, 180V, 700V, advanced low-voltage, low-capacitive, single N-channel MOSFET. It has a maximum current rating of 6. 2A, an RDS (on) max at 0.195Ω and a gate threshold voltage of 4. 0V. As such, this transistor can be used in a variety of applications and is suitable for many different applications, including power management, audio power, consumer electronics, motor drive, inverter systems, and industrial control.

In terms of its application field, the STL7NM60N can be used for power devices in places that require low gate charge, low thermal resistance, and low on-state resistance. Examples of such power devices include DC-DC converters, switching regulators, motor controllers and more. Moreover, its low RDS (on) characteristic and high reliability make it suitable for use as a fast switching device for high-end processors and other MOSFET-sensitive products.

When it comes to the working principle of the STL7NM60N, it is based on the simple principle of the MOSFET - or Metal-Oxide Semiconductor Field-Effect Transistor - that is utilized by the transistor itself. The principle mainly involves two types of conduction channels: the arrow between the source and the drain, and the barrier between the source and the gate, which can be referenced via this schematic:

The flow of current through the device is initiated when there is an applied voltage potential between the source and the gate. This voltage potential creates an electric field that attracts free electrons from the source to the gate. The free electrons then form a conducting channel between the source and the drain, which defines the On state of the transistor. The magnitude of the voltage potential determines the current flow through the transistor. The On-state resistance is determined by the mobility of the electrons and the thickness of the channel.

The elimination of the electric field at the gate is known as the Off-state of the transistor. The electric field is eliminated through a reduction in the gate-source voltage. In other words, if the applied gate-source voltage is lower than the threshold voltage or the Vth, then the transistor switches to the Off-state. The Off-state resistance is determined by the amount of the gate-source voltage and the amount of gate current.

To sum up, the STL7NM60N is a sixth-generation, 180V, 700V, advanced low-voltage, low-capacitive, single N-channel MOSFET. It has a maximum current rating of 6.2A and an RDS (on) max at 0.195Ω. In terms of its application field, it can be used for power devices in places that require low gate charge, low thermal resistance, and low on-state resistance, such as DC-DC converters, switching regulators, motor controllers and more. The working principle of the STL7NM60N is based on the MOSFET - or Metal-Oxide Semiconductor Field-Effect Transistor - principle, which involves two types of conduction channels, and wherein the magnitude of the applied voltage determines the current flow through the device.

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