STL7LN80K5 Allicdata Electronics
Allicdata Part #:

497-16496-2-ND

Manufacturer Part#:

STL7LN80K5

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 800V 5A POWERFLAT
More Detail: N-Channel 800V 5A (Tc) 42W (Tc) Surface Mount Powe...
DataSheet: STL7LN80K5 datasheetSTL7LN80K5 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Series: MDmesh™
Rds On (Max) @ Id, Vgs: 1.15 Ohm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The STL7LN80K5 is a device that belongs to the family of Field Effect Transistors (FETs). It is a single type of MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor). It is used in a variety of applications such as power amplifiers, RF power amplifiers, power circuits, and high frequency circuits.

The core of the STL7LN80K5 is an N-channel MOSFET which consists of a source, a drain, and a gate region. The gate is insulated from the source and drain regions by a thin layer of oxide. The magnitude of the voltage between the source and the drain is determined by applying bias voltage between the source and gate terminals. Additionally, the current flow between the source and the drain is regulated by changing the gate voltage.

The STL7LN80K5 offers a number of advantages. It has excellent reliable performance with the help of its optimized gate control system. Additionally, this MOSFET has a low on-resistance and low gate charge, which makes it ideal for low power applications. Furthermore, it also offers great power dissipation performance, high input/output impedance, and fast switching speed.

In terms of working principle, it operates similarly to other types of FETs; it creates a controlled electrical conduction pathway between the source and the drain electrodes via the application of a voltage to the gate electrode. The resistance between the source and the drain is determined by the magnitude of the voltage applied, and the amount of current that can flow through the path is regulated by the gate voltage.

The STL7LN80K5 can be used in a variety of applications, ranging from military and automotive applications to consumer electronics. One of its most common uses is to provide feedback signals in power amplifiers and power supplies. Its low on-resistance and low gate charge make it an ideal choice for use in low power applications such as RF power amplifiers and power circuits. Additionally, its high input/output impedance and fast switching speed make it suitable for use in high frequency circuits.

The STL7LN80K5 is a reliable and efficient device which is suitable for a wide range of applications. With its optimized gate control system and low on-resistance and gate charge, it is an ideal choice for low power circuits. Furthermore, its high input/output impedance, fast switching speed, and power dissipation performance make it suitable for use in high frequency circuits.

The specific data is subject to PDF, and the above content is for reference

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