Allicdata Part #: | 497-11221-2-ND |
Manufacturer Part#: |
STL75N3LLZH5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 75A POWERFLAT56 |
More Detail: | N-Channel 30V 75A (Tc) 60W (Tc) Surface Mount Powe... |
DataSheet: | STL75N3LLZH5 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1510pF @ 25V |
Vgs (Max): | ±18V |
Gate Charge (Qg) (Max) @ Vgs: | 11.8nC @ 4.5V |
Series: | STripFET™ V |
Rds On (Max) @ Id, Vgs: | 6.1 mOhm @ 9.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
STL75N3LLZH5 is a single N-Channel Power MOSFET designed for applications such as automotive, consumer, and industrial applications. The device is built using SOT-223 package with a leading-edge process technology.
Application Field of STL75N3LLZH5
The STL75N3LLZH5 is specifically designed for applications in the automotive, consumer, and industrial verticals. It is suitable for use in a DC/DC converters, UPS systems, power factor correction, DC-DC converters, server applications, automotive electronics, and various other high-power applications.
In the automotive sector, the device is used to drive high power electronic loads such as motors, leads, actuators and air conditioning systems. It can also be used in car audio and infotainment systems, energy management systems, and other areas that require more efficient management of energy and power.
In the consumer and industrial sectors, the device can be utilized in various applications such as industrial automation, process drive systems, data acquisition, and white goods. The device can also be used for communications, lighting and other general purpose applications.
Working Principle of STL75N3LLZH5
The STL75N3LLZH5 device is designed with a N-Channel enhancement mode process. The charge is stored along the N-channel, which results in varied gate-source voltage. The threshold voltage is kept at -4V. When a gate voltage of -4V or higher is applied, the MOSFET turns on and allows current to flow from the source to the drain. The gate voltage controls the current flowing through the source-drain junction of the MOSFET. As the gate voltage increases, the current flowing through the MOSFET increases as well.
The device has a very low on-resistance which makes it suitable for load switch applications. The low on-resistance helps to reduce the power losses while switching high current loads. The device also features an ESD protection level of up to ±20kV which makes it suitable for use in high voltage applications.
The device also has a very fast switching speed which allows it to operate at high frequency applications. The MOSFET also features a low gate charge and excellent avalanche capability which makes it suitable for use in high frequency applications.
The device has a very high thermal stability, which enables it to operate at high temperatures and in harsh environment. The device has a maximum junction temperature of +150°C, which makes it suitable for various applications that require high temperature operation.
Overall, the STL75N3LLZH5 is an ideal choice for high power electronic loads in the automotive, consumer, and industrial sectors. The device offers superior performance in terms of switching speed, thermal stability and current handling capability. Furthermore, it is designed to meet the latest safety standards and offers excellent ESD protection.
The specific data is subject to PDF, and the above content is for reference
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