STL7N6F7

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The STL7N6F7 is a single N-channel enhancement mode Field Effect Transistor (FET) with a low threshold voltage and low on resistance. It is used in wide variety of applications from low power motor control and power conversion to high power supply current switching.

Overview of the STL7N6F7

The STL7N6F7 is a region of interest MOSFET produced using a three level process that combines complementary conductivity-type insulated gate transistors with the ability to produce excellent switching characteristics. This MOSFET utilizes a wide area, high electrostatic passivation process which enables it to maintain a low threshold voltage while maximizing power efficiency. The combination of low threshold and high channel mobility allow this MOSFET to be used in a variety of applications, including both low voltage and high voltage switching applications.

The STL7N6F7 is packaged in a surface mountable, quad flat-pack design that provides simplified board assembly and testing, making it perfect for prototyping and in-circuit applications. The device is also available in through-hole packages for hand soldering.

Working Principle

MOSFETs employ a structure that allows for a very efficient control of the current between source and drain. A voltage applied to the gate of the MOSFET will open the channel between source and drain, allowing positive current to flow from source to drain. The amount of current can be controlled by varying the voltage applied to the gate of the MOSFET. When there is no voltage applied to the gate, the MOSFET is in the “OFF” state and no current will flow between drain and source.

The STL7N6F7 utilizes a charge control principle. When the gate voltage is greater than the threshold voltage, the charges in the channel region near the gate are attracted and are released, allowing current to flow between the source and drain. When the gate voltage is below the threshold voltage, the electrons in the channel region near the gate are repelled and no current will flow.

The output characteristics of the STL7N6F7 are affected by the gate-source voltage applied. As the gate-source voltage is increased, the drain current (ID) increases and the drain-source resistance (RDS) decreases. At higher gate-source voltage values, the device can handle more power and offer more performance than at lower voltage values.

Applications for the STL7N6F7

The STL7N6F7 is suitable for use in a wide range of applications. It is especially useful in applications requiring a low threshold, low on-resistance, and high switching speed. Here are some of the applications the STL7N6F7 is used in:

• DC-DC converters
• Automotive systems
• Motor control
• Lighting control
• High power switching
• Drives
• Switch mode power supplies
• Robotics

The STL7N6F7 can also be used in applications requiring high frequency operation due to its low capacitance and high switching speed. Additionally, its low internal gate resistance allows for low power dissipation and reduced switching losses.

Conclusion

The STL7N6F7 is a single N-channel enhancement mode MOSFET with a low threshold voltage and low on-resistance. It also offers excellent gate control and high switching speeds, making it suitable for use in a variety of applications from low power to high power switching. Its small size and ability to withstand higher voltages and temperatures make it an ideal candidate for in-circuit and prototyping applications.

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