STL70N4LLF5

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The STL70N4LLF5 is an advanced low voltage N-channel field-effect transistor (FET) designed to provide highly reliable electrical performance on battery-operated systems. It is designed to be used in various power-driver applications, such as DC-DC converters, switch-mode regulators, and DC-AC converters. The STL70N4LLF5 is constructed from high-performance advanced silicon MOSFET technology with low on-resistance and ultra-low drift, allowing for greater power density and efficiency.

Overview of the STL70N4LLF5

The STL70N4LLF5 is a single-channel field-effect transistor that offers an extremely low on-resistance. It is designed to operate in either single-ended or complementary modes at supply voltages of up to 21V. The device integrates a low side MOSFET and a high side MOSFET into the same package and is capable of switching currents up to 8A without additional cooling. The STL70N4LLF5 offers high efficiency and low voltage drop due to its low on-resistance of less than 18 mOhms, making it suitable for use in power-driver applications.

Application Fields

The STL70N4LLF5 is a versatile device that can be used in a variety of different applications, including:

• DC-DC Converters
• DC-AC Converters
• Switch-Mode Regulators
• High Power Switches
• Portable Electronic Devices

The STL70N4LLF5 is well-suited for use in battery-operated systems, offering high efficiency with low power dissipation and drift. The device is capable of handling up to 8A load current without additional cooling, making it a great choice for use in applications that need higher levels of power. Additionally, the device integrates a low side MOSFET and a high side MOSFET into the same package, providing a compact switching solution.

Working Principle

The STL70N4LLF5 is a field-effect transistor that consists of an insulated gate that controls an insulated channel between its source and drain electrodes. This channel serves as an electronic switch between the two electrodes, allowing current to pass through when the voltage applied to the gate exceeds a certain threshold. When the voltage on the gate is below the threshold, the channel is prevented from conducting, thus preventing current from flowing.

The STL70N4LLF5 is constructed from high-performance advanced silicon MOSFET technology with low on-resistance and ultra-low drift, allowing for greater power density and efficiency. The device integrates a low side MOSFET and a high side MOSFET into the same package, providing a compact switching solution. The device also offers a fast switching time of less than 15ns, allowing it to be used in high-speed applications.

Conclusion

The STL70N4LLF5 is a versatile single-channel field-effect transistor that can be used in various power-driver applications. It is designed to operate in either single-ended or complementary modes at supply voltages of up to 21V and offers a low on-resistance of 18 mOhms, allowing for greater power density and efficiency. Additionally, it features a fast switching time of less than 15ns, making it suitable for use in high-speed applications.

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