STY100NM60N

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The STY100NM60N is a high voltage N-channel power MOSFET which is commonly used for energy-efficient applications. The device’s high blocking voltage, superior switching capabilities, and cost effectiveness make it desirable for many applications.

Fields of Application

The STY100NM60N can be used in several fields and application, including power management, power conditioning, inverter and drive systems, lighting and appliance control, and other areas involving high voltage. This device is well-suited for use in industrial, domestic and process-oriented applications.

The STY100NM60N is particularly useful for applications that require high blocking voltages, as it is rated up to 800V block. It is suitable for use in systems designed to switch heavy loads and inductive loads, and is especially helpful in designs that use multiple power sources. Additionally, this device offers superior reverse current characteristics and EMC compliance, making it ideal for complex motor drive and PWM control applications.

The maximum drain-source voltage of the STY100NM60N is 600V. This device also features outstanding avalanche energy capability, low gate charge and low on-state resistance. All of these features result in an improved switching speed compared to other MOSFETs, thereby improving the efficiency of the overall system.

Working Principle

The STY100NM60N is a power MOSFET that is based on the static control principle. This means that in order to pass current through the device, a voltage must be applied to the gate terminal. When voltage is applied, the gate attracts electrons from the source, thus creating an inversion layer between the source and the drain. This layer forms a very low resistance path between the source and the drain, thus allowing current to flow. When the gate voltage is removed, the inversion layer collapses, thus blocking current flow through the device.

The STY100NM60N’s operation is largely determined by its threshold voltage rating. This rating is the minimum voltage that is required for the device to be turned on. The device will reach full conduction when the gate voltage exceeds this threshold. A lower threshold voltage requires less energy to turn the device on, thus improving overall system efficiency.

The STY100NM60N’s high voltage capability makes it suitable for a variety of applications. Its high blocking capability allows it to switch heavy loads and inductive loads, while its low on-state resistance provides increased system efficiency. Its avalanche energy capability further improves the device’s performance, resulting in a more reliable and efficient switch. All of these features combined make the STY100NM60N an ideal choice for high voltage applications.

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