Allicdata Part #: | 497-3267-5-ND |
Manufacturer Part#: |
STY140NS10 |
Price: | $ 10.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 100V 140A MAX247 |
More Detail: | N-Channel 100V 140A (Tc) 450W (Tc) Through Hole MA... |
DataSheet: | STY140NS10 Datasheet/PDF |
Quantity: | 22 |
1 +: | $ 9.48150 |
10 +: | $ 8.71353 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | MAX247™ |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 450W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 12600pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 600nC @ 10V |
Series: | MESH OVERLAY™ |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 70A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 140A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STY140NS10 is a molded-type N-channel insulated-gate field-effect transistor (IGFET) that operates as a switch. It is part of a large family of field-effect transistors available for various electronic design applications. The device is commonly known as an insulated-gate field-effect transistor (IGFET) and it is a unipolar device, meaning that it is capable of only conducting current in one direction. It is a device that exploits the FET phenomenon, where electrons or holes are moved through a semiconductor channel due to the presence of an electric field generated by external components. The STY140NS10 is designed to be used in such applications as switching power supply circuits, motor control circuits, analog signal amplification, and interface circuits.
An IGFET is composed of two electrodes; the gate and the source. The gate is the controlling factor of the transistor and is used to control the current flow through the device. The source is the power supply for the device and is used to supply the current necessary for the gate to control the current through the device. The STY140NS10 can be viewed as an electronically-controlled switch, where an input signal is applied to the gate and the source voltage is maintained at a constant level.
The STY140NS10 IGFET works by applying a voltage to the gate of the device which creates an electric field in the channel region between the source and drain. This electric field attracts the carriers, which are electrons or holes, depending on the type of FET, to the gate region. When the voltage on the gate is increased, more carriers are attracted to the gate, which increases the current flow through the device as the resistance in the channel region decreases. Similarly, when the voltage is decreased, the current flow through the device decreases as the resistance in the channel region increases. Because of this, the STY140NS10 can be used as an electronically controlled switch. It can be used to control the current flow in a circuit and to switch the circuit’s power on and off.
The application field of the STY140NS10 is mainly in switching power supply and motor control circuits, where a large current needs to be switched on and off quickly and efficiently. It can also be used in analog signal amplification and interface circuits as it can be used to amplify signals and to interface with sensors or other circuits. It can be used to switch power to a motor, control the speed of a motor, amplify analog signals, and interface with other circuits.
The STY140NS10 is designed to provide a low on-resistance, meaning that when the device is in the on-state, the resistance between the source and drain is very low. This low resistance allows for high current flow through the device when it is in the on-state, allowing it to be used in motor control and switching power supply applications. The device also provides good power dissipation, meaning that it can handle high currents and voltage limits.
In summary, the STY140NS10 is an N-Channel ICFET that can be used for switching power supply and motor control circuits, analog signal amplification, and interface circuits. It can control the current flow through a circuit and switch the circuit’s power on and off, and it also provides good power dissipation so that it can handle high currents and voltage limits. It is an ideal choice for applications where a high current needs to be switched on and off quickly and efficiently.
The specific data is subject to PDF, and the above content is for reference
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