| Allicdata Part #: | 497-13043-5-ND |
| Manufacturer Part#: |
STY139N65M5 |
| Price: | $ 22.32 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 650V 130A MAX247 |
| More Detail: | N-Channel 650V 130A (Tc) 625W (Tc) Through Hole MA... |
| DataSheet: |  STY139N65M5 Datasheet/PDF |
| Quantity: | 1611 |
| 1 +: | $ 20.28600 |
| 10 +: | $ 18.76450 |
| 100 +: | $ 16.02590 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | MAX247™ |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 625W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 15600pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 363nC @ 10V |
| Series: | MDmesh™ V |
| Rds On (Max) @ Id, Vgs: | 17 mOhm @ 65A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 130A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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STY139N65M5 is a N-channel Enhancement Mode MOSFET with an enhanced voltage capability. It is designed to provide high-performance switching performance and to operate over a broad range of temperatures and voltages. This device is ideally suited for applications where power distribution, high speed response, and/or ultra low RDS is desired.
Application fields
The STY139N65M5 is ideally suited for high-power applications including DC-DC converters, high current motor drivers, automotive under-the-hood applications, and other power systems. The features make them highly suitable for use in wide range of industrial and consumer electronics equipment. This FET is particularly well suited for high temperature applications such as servers and other high power applications.
The STY139N65M5 can also be used in audio power amplifiers and power supply designs. It also finds application in solar inverters and load controllers. The low on-resistance of the device makes it attractive for use in power control, high efficiency, and energy-saving applications.
Working principle
The STY139N65M5 is an N-channel MOSFET. It operates by a combination of charge and force fields. The device contains an internal gate and drain which are separated by an oxide barrier. When a positive potential is applied to the gate, the charge field creates an inversion layer of electrons located underneath the oxide barrier. This inversion layer causes a current to flow between the gate and the drain. As the current increases, the force field created by the gate enables the device to channel the current to the drain in a very efficient manner.
The STY139N65M5 device offers high switching performance and fast switching speed. It also has an enhanced voltage capability which allows it to operate under different types of voltages and temperatures, making it ideal for a wide range of application areas. The STY139N65M5 is one of the most popular MOSFETs available on the market due to its excellent performance and long-term reliability.
The specific data is subject to PDF, and the above content is for reference
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