Allicdata Part #: | 497-13290-5-ND |
Manufacturer Part#: |
STY105NM50N |
Price: | $ 16.74 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 110A MAX247 |
More Detail: | N-Channel 500V 110A (Tc) 625W (Tc) Through Hole MA... |
DataSheet: | STY105NM50N Datasheet/PDF |
Quantity: | 470 |
1 +: | $ 15.21450 |
10 +: | $ 14.07360 |
100 +: | $ 12.01950 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | MAX247™ |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 625W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9600pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 326nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 52A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STY105NM50N is a type of single-sourced power field-effect transistor (FET). This particular type of FET is specifically designed to have very low on-capacitance and fast switching features, making it ideal for high performance applications. The STY105NM50N is commonly used for switching, audio amplification, and other analog and digital signal processing applications.
The STY105NM50N is a surface-mount MOSFET, meaning it is a three-terminal device capable of being mounted directly to the surface of a printed circuit board. This allows for high levels of current to be routed in a very small space, making it ideal for applications where space is at a premium. Furthermore, the three-terminal device offers a very wide voltage range, making it suitable for power supply designs requiring a wide variety of voltages.
The main advantage of the STY105NM50N is its compact size, allowing for more efficient routing of power in tight areas. It also has an ultra-low threshold voltage, enabling its use in medium power designs. Additionally, its gate capacitance is very low, making it less susceptible to noise and other interference. The STY105NM50N also comes with an internal ESD (Electrostatic Discharge) protection for applications that require protection against static electricity.
The STY105NM50N works by converting the electrical current from a power source into a proportional voltage. This occurs due to the physical properties of the MOSFET, which allows the transistor to be turned on by a small voltage applied to the gate. When the voltage is applied to the gate, it forms a channel between the drain and the source, causing electrons to flow from the source to the drain and creating current. This current can then be changed by manipulating the using the gate voltage, making it ideal for switching and amplification applications.
The STY105NM50N is an excellent choice for power supply and switching applications due to its high current capabilities, fast switching speeds, and low threshold voltage. It is well suited for medium power applications requiring a wide range of voltages, as well as in audio and digital signal processing. Additionally, its low gate capacitance and ESD protection make it very robust and reliable.
The specific data is subject to PDF, and the above content is for reference
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