STY145N65M5

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The STY145N65M5 is a N-channel enhancement-mode lateral field effect transistor. This type of device has many uses, however, is most often employed as a power transistor, in applications such as motor control, lighting, power amplifiers and power switching. The process technology used in the STY145N65M5 is the versatile Trench MOSFET (TMOS) process, which provides a low on-resistance along with low gate charge and fast switching characteristics.

The STY145N65M5 transistor can operate with an input voltage of up to 500V and a total drain source voltage of up to 650V. The on-resistance of the device can be as low as 0.14 Ohm, which makes it well-suited for high-power applications. The transistor has a package type of PowerFLAT 5x6 with a rating of 65A at 25°C and 55A at 125°C. The device has a maximum operating temperature of 175°C.

The working principle of the STY145N65M5 transistor is quite simple. It is a Field Effect Transistor which works on the principle of modulation of the current flow between the source and the drain terminals, when a voltage is applied between the gate and the source terminals. When the voltage is increased between the gate and source terminals, more electrons are pushed in the channel and the current flow increases between the source and drain terminals. Conversely, when the voltage is reduced, the current flow decreases between the source and drain terminals.

In summary, the STY145N65M5 is a N-channel enhancement-mode lateral field effect transistor, which provides good performance and fast switching in applications such as motor control, lighting, and power applications. With a maximum operating temperature of 175°C and an on-resistance of 0.14 Ohms, the device is ideal for high-power and low-frequency applications where efficiency and speed are both required.

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