STY100NS20FD

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The STY100NS20FD is a n-channel depletion mode MOSFET specifically developed for switching applications and load driving circuits. As such, its main field of application covers the areas of power saving switch, battery switch and DC - DC converters. Moreover, the STY100NS20FD is also suitable for use in board level circuit protection and DC motor control.

The STY100NS20FD is designed to provide a high level of performance, thermal and ESD robustness, and low on-resistance. It employs a low-frequency, high-voltage trench structure and advanced process parameters to deliver high performance in the markets requested by customers. It is a highly integrated and cost-effective device that provides the level of performance, robustness and protection suitable for a variety of devices and applications.

The STY100NS20FD provides advanced gate and body protection against ESD and short circuit, as well as a low gate charge that bears power losses. It has a low on-resistance Rds (on), which guarantees low switching losses, low reverse recovery and an enhanced system efficiency under high reverse operating frequencies.

The STY100NS20FD also has an advanced high-voltage technology and the “plug and play” design. Its low input capacitance and small package size make it optimal for driving low-voltage DC motors. The STY100NS20FD also features a highly efficient channel, allowing it to handle high-current pulsed drive applications with low drop off voltages.

The STY100NS20FD has a working principle that is based on the field-effect transistor (FET). FET is a type of semiconductor device that uses an electric field to control the flow of electrons from one end to the other. The STY100NS20FD works by using a voltage applied to the gate electrode to control the flow of electrons through a channel. When a voltage is applied to the gate, the channel between the source and drain becomes conductive and current flows through the device. When the voltage is removed, the channel becomes non-conductive and the current flow is blocked.

In addition, the STY100NS20FD provides the following advantages: fast switching speed, low gate charge, low Rds(on), low on-state voltage, high drain-source breakdown voltage, and high operating temperature of 150 degrees Celsius. It also supports a maximum drain-source voltage of 100V and a maximum current rating of 30A. The STY100NS20FD is available in a standard TO-220 package.

In summary, the STY100NS20FD is a highly integrated and cost-effective MOSFET suitable for switching applications and load driving circuits. It features an advanced high-voltage technology and the “plug and play” design. Its low gate charge and small package size make it optimal for driving low-voltage DC motors. The STY100NS20FD has low on-resistance and low-frequency, high-voltage trench structure, and provides fast switching speed, high operating temperature of 150 degrees Celsius, and a maximum drain-source voltage of 100V and a maximum current rating of 30A.

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