STY130NF20D

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STY130NF20D is a N-channel MOSFET from STMicroelectronics. It is a Near-Logic level FET, which has fast switching properties. This is suitable for low power applications, as well as low cost switching applications in the automotive, telecom, and consumer electronics markets.

The application field of STY130NF20D is quite wide, as it is known to perform well in low power applications. It has been used in applications such as motor drivers, DC-DC converters, automotive electronics, telecom applications, and consumer electronics applications. The low on resistance and low gate threshold make it suitable for low power switch control and load switching applications.

To understand how STY130NF20D works, it is important to understand how MOSFETs work in general. MOSFETs, or metal-oxide-semiconductor field-effect transistors, are 4-terminal devices that are mainly used as switches or voltage-controlled resistors. They consist of a gate, source, and drain, with the gate being the input, the source being the output, and the drain being the output-plus-power.

MOSFETs work by using a gate voltage to change the resistance between the source and drain terminals. The gate voltage is applied between the gate and the source, which creates an electric field between them. This electric field will cause charge carriers (electrons or holes) to be attracted or repelled, depending on the gate voltage. When the gate voltage is sufficient, the MOSFET will turn on, allowing current to flow through the source and drain terminals. In the case of an N-channel MOSFET, the gate voltage needs to be negative to turn on the device.

For STY130NF20D, the gate threshold voltage is just 2 V, which makes it suitable for many low-power applications. The gate capacitance of STY130NF20D is very low (1.3 nF), which means that it has very fast switching times. The low gate threshold also eliminates the need for level-shifting circuitry, which can reduce power consumption and cost. The drain-source breakdown voltage is 20 V, and the drain-source on-resistance is only 3.2 milliohms. This means that the MOSFET can easily handle up to 20 V, and provide a low resistance path between the source and drain when switched on.

In summary, STY130NF20D is a N-channel MOSFET from STMicroelectronics that is well suited for low power applications. It has a low gate threshold voltage of just 2 V, a low gate capacitance of 1.3 nF, and a low drain-source on-resistance of only 3.2 milliohms. Its fast switching time, low gate threshold, and low on resistance make it a great choice for low power switch control and load switching applications in the automotive, telecom, and consumer electronics markets.

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