Allicdata Part #: | SUP60030E-GE3-ND |
Manufacturer Part#: |
SUP60030E-GE3 |
Price: | $ 1.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 80V 120A TO220AB |
More Detail: | N-Channel 80V 120A (Tc) 375W (Tc) Through Hole TO-... |
DataSheet: | SUP60030E-GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 1.05995 |
Series: | TrenchFET® |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.4 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 141nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7910pF @ 40V |
FET Feature: | -- |
Power Dissipation (Max): | 375W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
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The SUP60030E-GE3 is a type of single junction field effect transistor, commonly known as an FET, which is often used in important electronics applications. A field-effect transistor (FET) is a type of transistor that controls electric current through a voltage applied to the electric field between two parallel gates. FETs can be used in many different applications including amplifiers, power control devices, voltage regulators, and switching. The SUP60030E-GE3 is a P-Channel Enhancement mode FET which is designed to be used in applications requiring a stable, low current path.-.
The SUP60030E-GE3 consists of a single junction FET and a number of other components. It is usually mounted on a circuit board or connected to other electronic components. The main components of the SUP60030E-GE3 include a gate, drain, and source, as well as a gate control voltage terminal. The source and gate are connected to the negative and positive gate control terminals, respectively. The drain is the output terminal. The source, gate, and drain contacts can be connected to other components in the circuit.
The key feature of the SUP60030E-GE3 is its low current path. This is a result of its outlet design which consists of a small gap to create a large drain area when the FET is turned on. This allows for low current leakage and high channel conductance. This makes the SUP60030E-GE3 a good choice for applications that require a low power consumption. It also operates at an extremely low voltage and is suitable for battery-powered electronics.
The SUP60030E-GE3 has a number of applications in which it is useful. It is often used in electronic devices that require low power consumption such as small circuit boards, or circuits that can dimly light LED (light-emitting diode) displays. It can also be used in logic gates and microprocessors as a low power switch.
The working principle of the SUP60030E-GE3 is based on the basic turning-on and turning-off of a transistor. When the gate voltage is positive, the transistor is turned on and current flows from the source terminal to the drain terminal. When the gate voltage is negative, the transistor is turned off and the current does not flow. The control terminal can be used to adjust the amount of current that can flow through the circuit or it can be used to turn the transistor off completely.
The main advantage of the SUP60030E-GE3 is its low-power consumption and its wide range of applications. It is also a reliable and cost-efficient device, making it a popular choice for many electronics applications. Additionally, the SUP60030E-GE3 is a good choice for applications that require low maintenance and temperature stability.
The specific data is subject to PDF, and the above content is for reference
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