Allicdata Part #: | SUP65P04-15-E3-ND |
Manufacturer Part#: |
SUP65P04-15-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 40V 65A TO220AB |
More Detail: | P-Channel 40V 65A (Tc) 3.75W (Ta), 120W (Tc) Throu... |
DataSheet: | SUP65P04-15-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 65A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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SUP65P04-15-E3 is a logic level enhancement mode N-channel MOSFET, with typical power dissipation of up to 65W. It falls under the category of Transistors - FETs, MOSFETs - Single, and is a cost-effective component for power supply systems and low-side switch applications.
Application field of SUP65P04-15-E3
The SUP65P04-15-E3 MOSFET is mainly utilized in the power switch circuits of systems, especially those that require logic level switching. It is especially well-suited for driving heavy loads, such as inductive or capacitive loads. The logic level enhancement feature makes this MOSFET provides added safety for the system, because it does not require additional external voltage control as a non-logic level MOSFET. This means that it is easier to protect from over-current and transients.
The SUP65P04-15-E3 MOSFET can be used in applications such as motor controls, power supplies, and power switching circuits. It is also suitable for use in applications that require increased or decreased power consumption quickly, such as LED drivers and other DC-DC converters. For load switching, this MOSFET is suitable for switch/relay/contactor applications allowing for high current and high switching speed. This makes it an ideal choice for controlling high-power loads, such as in solar cell and battery switch modules.
Working principle of SUP65P04-15-E3
The SUP65P04-15-E3 MOSFET is a high-voltage, high-current device, constructed using a drain and source of N-type silicon substrate, separated by an insulated Gate dielectric. When a positive voltage is applied across the gate and source of the MOSFET, current can flow from the source to the drain. The higher the voltage is across the drain and source, the greater the current that can be conducted.
The SUP65P04-15-E3 display low nreshold voltage, enabling logic-level switching performance, making it ideal for applications that require a high degree of control at low gate drive voltages. It has a maximum Sustainable Drain-Source Voltage of 40V, making it suitable for wider range of applications. It also boasts a maximum Drain Current of 66A, allowing it to handle high-power loads.
The SUP65P04-15-E3 has a very low output capacitance, which helps to minimize switching losses. It also exhibits low gate charge and low gate input capacitance, making it well suited for power factor correction (PFC) applications. In these applications, it helps reduce reverse turn-off time and improves overall efficiency.
The specific data is subject to PDF, and the above content is for reference
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