Allicdata Part #: | SUP60N10-18P-E3-ND |
Manufacturer Part#: |
SUP60N10-18P-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 60A TO220AB |
More Detail: | N-Channel 100V 60A (Tc) 3.75W (Ta), 150W (Tc) Thro... |
DataSheet: | SUP60N10-18P-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2600pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 18.3 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 8V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SUP60N10-18P-E3 is a SuperFET II power MOSFET produced by International Rectifier. It belongs to the family of transistors and is one of the FETs and MOSFETs. It is designed specifically for power supply applications and is in a single form.
The SUP60N10-18P-E3 uses the latest process technologies such as ion-implantation and annealing to reduce its static and dynamic on-resistance. Its gate-drain breakdown voltage is guaranteed at a maximum of 18 volts. It also has a high input capacitance and fast switching speeds.
The device is specifically designed to reduce losses when used in power management circuits. Its low on-resistance and fast switching times make it a good choice for switching circuits and other applications where low power losses are important. Its wide operational temperature range ensures reliable operation in extreme conditions.
The primary application of the SUP60N10-18P-E3 is in power supply circuits. It can be used in power management circuits to reduce off-state losses and improve efficiency. Other potential applications include switching circuits, DC-DC converters, audio amplifiers, and digital logic circuits.
The working principle of the SUP60N10-18P-E3 is similar to that of other FETs and MOSFETs. It consists of four terminals, two of which act as the source and drain. The voltage applied to the gate terminal controls the flow of current between the source and drain. When the gate voltage is below the threshold voltage, the transistor is said to be in off-state and no current will flow. When the gate voltage is above the threshold voltage, the transistor is said to be in on-state and a current will flow.
The SUP60N10-18P-E3 is a single device that combines the advantages of both FETs and MOSFETs. It is a reliable and efficient switch that can be used in a variety of applications. Its low voltage and high current capabilities make it a good fit for power supply circuits and other applications requiring low-loss switching. Its wide operating temperature range ensures reliable operation in extreme conditions.
The specific data is subject to PDF, and the above content is for reference
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