| Allicdata Part #: | SUP60N02-4M5P-E3-ND |
| Manufacturer Part#: |
SUP60N02-4M5P-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 20V 60A TO220AB |
| More Detail: | N-Channel 20V 60A (Tc) 3.75W (Ta), 120W (Tc) Throu... |
| DataSheet: |  SUP60N02-4M5P-E3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.75W (Ta), 120W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5950pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 4.5V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The SUP60N02-4M5P-E3 is a MOSFET (metal-oxide semiconductor field-effect transistor) that is manufactured by Vishay. It is a part of their Supreon series and provides outstanding performance in small-signal applications. It is a P-channel enhancement mode, small-signal MOSFET with low on-resistance, high-speed switching, and fast turn-off times.
The SUP60N02-4M5P-E3 has a wide range of applications in different electronic configurations. Its applications range from voltage and current regulators, power switches for logic circuits, and analog switching to switching-power supply rectification and DC-DC converters. It is also used for Class D audio and for level shifting, or switching signals from one logic level to another.
The working principle of the SUP60N02-4M5P-E3 is similar to other types of MOSFETs. It is a three-terminal device with a gate, a source, and a drain. When a voltage is applied to the gate, it creates an electric field which creates a depletion region at the junction between the source and drain. This depletion region attracts electrons, which creates a depletion region at the junction between the source and drain. This causes the resistance between the source and drain to decrease, allowing current to flow.
The SUP60N02-4M5P-E3 has good switching speed, allowing fast switching times. It also has low on-resistance and a low threshold voltage, which makes it ideal for small-signal applications. It is designed to handle high frequency operations and can perform reliable switching in high temperature applications. Finally, its on-resistance is linear over voltage, making it suitable for precision applications.
Overall, the SUP60N02-4M5P-E3 has a wide range of applications in many electronic configurations. It is designed with a low on-resistance and a low threshold voltage, providing excellent performance in small-signal applications. Its fast switching speeds make it suitable for high-frequency applications and its on-resistance is linear over voltage, making it suitable for precision applications. The SUP60N02-4M5P-E3 is an excellent choice for any application that requires a reliable and high-performance MOSFET.
The specific data is subject to PDF, and the above content is for reference
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