| Allicdata Part #: | SUP60N06-12P-E3-ND |
| Manufacturer Part#: |
SUP60N06-12P-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 60V 60A TO220AB |
| More Detail: | N-Channel 60V 60A (Tc) 3.25W (Ta), 100W (Tc) Throu... |
| DataSheet: |  SUP60N06-12P-E3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.25W (Ta), 100W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1970pF @ 30V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 12 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The SUP60N06-12P-E3 is a three-terminal N-channel enhancement mode MOSFET produced using CMOS technology. This device offers low on-resistance and excellent gate capacitance. It has self-protection functions, such as avalanche capability, load dump protection and gate charge protection, making it suitable for a wide range of applications.
The SUP60N06-12P-E3 is primarily used in voltage regulator circuits, DC-DC converters, general purpose switching, motor control, and other high current switching applications. It is available in the industry standard SOP-8 package and is suitable for use in a wide range of operating temperatures (-55°C to 150°C).
The SUP60N06-12P-E3 consists of an N-channel enhancement mode MOSFET with a dedicated gate-to-source terminal. As with all other MOSFETs, this device is controlled by the voltage applied at the gate. When a positive gate voltage is applied, the MOSFET turns on and electricity will flow from the drain to the source. Conversely, when a negative gate voltage is applied, the MOSFET turns off and no current will flow. This is the basic working principle of the SUP60N06-12P-E3.
The device also features excellent off-state leakage current performance and low on-resistance. It has excellent ruggedness and durability, making it suitable for harsh environments. In addition, it has high noise immunity and low turn-on time, making it suitable for high speed switching applications. It also has overload protection, ESD protection, and overload protection.
The SUP60N06-12P-E3 is an excellent choice for a wide range of high current switching applications. It offers high voltage protection, low drain-source on-resistance, low turn-on time, excellent switch performance, and advanced over voltage protection. It is available in the industry standard SOP-8 package and is suitable for use in a wide range of operating temperatures.
The specific data is subject to PDF, and the above content is for reference
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