Allicdata Part #: | SUP60N10-16L-E3-ND |
Manufacturer Part#: |
SUP60N10-16L-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 60A TO220AB |
More Detail: | N-Channel 100V 60A (Tc) 150W (Tc) Through Hole TO-... |
DataSheet: | SUP60N10-16L-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3820pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SUP60N10-16L-E3 is a special metallic oxide semiconductor field effect transistor (FET) known as a Power MOSFET. This specific FET is also called an N-channel enhancement type. It is a single device, meaning that it only has one channel. It has a drain-source drain breakdown voltage (VDSS) of 100 volts and a continuous drain current (ID) of 65 amperes. It is also capable of a maximum drain-source on state resistance (rDS(on)) value of 0.06 ohms.
SUP60N10-16L-E3 devices are commonly used to switch power, or to represent analog signals whenever high input impedance is desired. They are useful in motor controls, audio and video amplifiers, switchbutton controllers, and other applications where high voltage potentials are desired.
A power MOSFET, such as the SUP60N10-16L-E3, works by using the PN junction to switch a large amount of current using a low operating voltage. This FET has a cardam section with integrated power MOSFET technology, and this allows for a more efficient use of the transistor, because more current can be switched at lower gate voltages.
The working principle of a power MOSFET is based on the operation of the PN junction. When the control voltage is applied to the gate terminal, the operation of the junction is reversed. As a result, the transistor is said to "turn on," allowing a low-resistance path to exist between the source and drain. If the control voltage is removed, the PN junction returns to its original state, allowing the resistor between the source and the drain to block current flow. This switching function can be used to create various circuit configurations, such as a switch, a logic gate, or an amplifier.
Using the SUP60N10-16L-E3 FET, a system designer can also implement a variety of circuit topologies. In power MOSFET circuits, a high-side switch is commonly used to drive a large load. In such a configuration, the power FET is connected between the voltage source and the load. When the gate voltage is applied, current passes from the source, through the FET, and to the load. When the gate voltage is removed, the current flow is cut off.
The SUP60N10-16L-E3 is also suitable for use in voltage regulation applications, as well as for driving other power circuit components such as motors, solenoids, and other loads that require a high voltage potential. It is a good choice for industrial applications, as well as for consumer audio and video systems.
The specific data is subject to PDF, and the above content is for reference
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