SUP60N06-12P-GE3

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The SUPERFET SUP60N06-12P-GE3 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is designed to be used in a variety of applications. It provides high performance, scalability, reliability, and low power consumption. This MOSFET is designed specifically to be used in both low and high power switching applications.

The SUP60N06-12P-GE3 is part of the SFET (SuperFET) family of MOSFETs, and it has an active area of 60 microns and a nominal package size of 5 x 6 millimeters. It has a maximum drain-source voltage of about 12 Volts and can handle as much as 85 Watts of power. The device is rated for a maximum continuous on-state current of 6 Amps.

The SUP60N06-12P-GE3 has a low plateau voltage, which is the voltage when the drain-source current begins to increase. This results in less power consumption and better efficiency when the device is used in low-power switching applications. The device also provides lower gate-source capacitance and lower gate charge, which makes it better suited for high-speed switching applications.

The SUP60N06-12P-GE3 has an integrated fast turn-on system, which makes it suitable for low-power switching applications. In addition, the device has an integrated temperature compensation system, which helps to ensure a consistent performance over a wide temperature range. The device also has an integrated on-resistor, which helps to protect the device from damage when the drain-source voltage is applied.

The SUP60N06-12P-GE3 can be used in a variety of applications, such as DC-DC converters, motor control applications, DC power supplies, and in low-power switching applications. This device is also well-suited for use in data communications and telecommunications applications. Due to its small package size and integrated features, it is also often used in portable electronic devices.

The working principle of the SUP60N06-12P-GE3 is fairly straightforward. When the gate-source voltage is applied, it creates an constant electric field between the gate and the source. This electric field induces a current in the channel between the gate and the source, which is referred to as the drain-source current. When the current reaches its peak, the drain-source voltage begins to rise, and this is referred to as the plateau voltage. As the drain-source voltage increases, the drain-source current also decreases, and as the drain-source current decreases, the drain-source voltage decreases as well. This process is known as the “U-shaped” characteristic, which is the desired characteristic for most switching applications.

The SUP60N06-12P-GE3 is a great choice for a wide range of applications. It provides excellent performance, reliability, scalability, and low power consumption. It is also ideally suited for use in low-power switching applications as well as in high-speed switching applications. Due to its integrated features, it is also well-suited for use in portable electronic devices.

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