SUP80090E-GE3

Series:	ThunderFET®
Packaging:	Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	150V
Current - Continuous Drain (Id) @ 25°C:	128A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	7.5V, 10V
Rds On (Max) @ Id, Vgs:	9.4 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	95nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	3425pF @ 75V
FET Feature:	--
Power Dissipation (Max):	375W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3

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The SUP80090E-GE3 is a high-performance, low-power MOSFET transistor integrated circuit (IC) which is highly reliable, energy efficient and ideal for a wide range of applications. It is specifically designed to eliminate the need for a separate power supply and make system applications more efficient and cost-effective. This device features an integrated DC/DC boost converter and an integrated low EMI (electromagnetic interference) power switch that allow the MOSFET transistor to operate with high efficiency and low power dissipation.The SUP80090E-GE3 provides an effective switch for controlling circuits involving high current signals, especially in noisy environments. This MOSFET transistor is composed of two separate transistors, the N-type and P-type MOSFETs, working in parallel. When powered on, the gate-source voltage (Vgs) of the N-channel MOSFET will be applied to the source while the P-channel MOSFET will be in its off-state. The N-channel MOSFET will allow high current signals to go through while the P-channel MOSFET will be off.The SUP80090E-GE3 is particularly suitable for use in applications where the current capacity needs to be increased without compromising the power dissipation. For example, it is typically used in power management applications such as universal serial bus (USB) power boosting, low-power home appliances, and electronic point-of-sale (EPOS) systems. The superior noise immunity of this device also makes it highly suitable for use in noisy environments where immunity to electromagnetic interference (EMI) is a critical factor.The workings of the SUP80090E-GE3 rely on a basic principle of MOSFET transistor operation. When a voltage is applied between the gate and source of the device, a strong electrostatic field in the dielectric of the device is created which cause the MOSFET to "pinch-off" current. This allows the MOSFET transistor to be used to control currents, in this case allowing high current signals to go through while limiting power dissipation.The SUP80090E-GE3 features a built-in protection circuit which monitors the power switch and shuts down the device if the current exceeds a certain level. This ensures an increased safety margin and increased reliability for the device. It also ensures that the system applications become more efficient, with the power switch controlling the current levels without having to over compensate.The SUP80090E-GE3 is perfect for applications where a low power MOSFET transistor is required. This device is capable of delivering high current signals efficiently, without compromising on power dissipation. Its integrated design, built-in protection circuit, low EMI noise immunity and low-power operation make it ideal for applications that require improved efficiency, low power dissipation and increased reliability.

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