SUP85N03-3M6P-GE3

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The SUP85N03-3M6P-GE3 is a highly efficient single N-channel MOS field-effect transistor (MOSFET) with higher power density than its previous generations— all in a ThinSOTTM (TSOT23-6) package. This MOSFET is ideal for use in power supplies and switchmode applications where a small form factor is preferred. Furthermore, its low gate capacitance, low gate threshold voltage and exquisite on-state resistance makes it fit a wide range of applications.

The SUP85N03-3M6P-GE3 can be used across a vast array of applications that require superior switching performance with high efficiency and reliability. These include, but are not limited to, switch power supplies, DC/DC converter circuits, motor drive applications, battery-powered applications, and more. Furthermore, as the SUP85N03-3M6P-GE3 has a low on-state resistance with a fast switching time and a high maximum operating temperature of 150°C, it is ideal for use in high temperature and/or high frequency operations.

The working principle of the SUP85N03-3M6P-GE3 involves an input voltage that is applied to the gate to open or close the drain–source channel. The gate acts as the signal input for the device for controlling the conditions of the current between the input and output voltage. As the voltage across the gate increases, the field-effect transistor gets turned on and allows the flow of current from the source to the drain. The on-state current flow and the output voltage is controlled by the input signal, hence the operating frequency of the device. When the gate voltage decreases, the device turns off, thus blocking the current flow from the source to the drain.

In order to ensure the efficiency of the SUP85N03-3M6P-GE3, it is important to consider the thermal management, the input voltage swing and the maximum gate charge. The thermal management should be such that it maintains the junction temperature of the device at the permissible level. This can be done by providing adequate heat dissipation and cooling solutions. The input voltage swing should be chosen based on the specification sheet and the gate charge determines the maximum output current that can be taken out of the device. It is also important to maintain the SOA (safety operating area) by limiting the current through the device and the power density.

Through its combination of small size and high reliability, the SUP85N03-3M6P-GE3 promises maximum efficiency and cost effectiveness for switch mode applications. Its wide range of applications, including powering battery-driven applications and high-temperature, high-frequency operations makes it a valuable addition in any switchmode environment.

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