SUP85N10-10-GE3 Discrete Semiconductor Products

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The SUP85N10-10-GE3 is a N-channel enhancement mode MOSFET. As an enhancement mode MOSFET, it is an excellent off-state switch and works as a power amplifier in linear and switching applications. This versatile device is attractive to designers and engineers because of its high level of performance, low gate threshold voltage, low drain-source on-state resistance, and low cost.

The SUP85N10-10-GE3 is a power transistor specifically designed for use in electronic circuits as a switch and amplifier. The transistor is built on a substrate of silicon, and uses a gate, a source and a drain. The gate is made up of many tiny transistors, and the source and drain are tied together at the gate.

The SUP85N10-10-GE3 has a low voltage gate threshold voltage, which makes it suitable for low voltage applications. It has a low gate charge, which minimizes switching losses, and it has a high input impedance, which helps to reduce power consumption. The device also has a low on-state resistance, which enables it to handle higher currents and higher voltages, and a low capacitance, which makes it more tolerant of transients. The device can be used in applications such as AC motor control, DC motor control, DC-DC converters and power supply switching.

The SUP85N10-10-GE3 has excellent breakdown voltage, which makes it suitable for high-voltage applications. It also has excellent saturation voltage, which can help minimize power dissipation. The device has an excellent thermal resistance, which enables it to dissipate its heat quickly and efficiently when switching heavy loads. The device is also able to withstand dV/dt, which makes it suitable for high-speed switching applications.

The SUP85N10-10-GE3 has a fast response time and can switch in as little as 10 microseconds. This makes it suitable for use in high speed circuits and for application that demand high accuracy. The device has a low gate-source voltage, which means it can be combined with a variety of logic gates. The device also has a wide safe operating area which makes it suitable for a wide range of applications.

The SUP85N10-10-GE3 has a high avalanche current, which makes it suitable for high-current switching applications. It also has a high drain-source voltage rating, which can help reduce power consumption in switching applications. The device also has an excellent drain-source of isolation, which helps reduce the risk of short circuits.

The working principle of the SUP85N10-10-GE3 is based on the flow of electrons between the source and drain when the gate voltage is greater than the gate threshold voltage. When the gate threshold voltage is exceeded, the device will switch on and a current will flow from the source to the drain. When the gate voltage is reduced, the device will switch off and the current will stop flowing.

The SUP85N10-10-GE3 is a versatile device suitable for a wide range of applications, from simple off-state switching to high speed power amplifier switching. With its low gate threshold voltage, low drain-source on-state resistance and low cost, it is an attractive device for many applications. It also has a wide safe operating area and high avalanche current which makes it suitable for high current switching applications.

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