Allicdata Part #: | SUP85N04-03-E3-ND |
Manufacturer Part#: |
SUP85N04-03-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 85A TO220AB |
More Detail: | N-Channel 40V 85A (Tc) 3.75W (Ta), 250W (Tc) Throu... |
DataSheet: | SUP85N04-03-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 85A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 250nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6860pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.75W (Ta), 250W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
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SUP85N04-03-E3 is a kind of power MOSFET designed by Vishay Semiconductors. It is a dual-channel N-channel enhancement mode MOS field-effect transistor (MOSFET) constructed with vertical DMOS technology. It\'s designed to improve the system performance and to reduce power losses and the power dissipation of the board. It is available in a hermetically sealed TO-220AB package that has a large area exposed pad for heat dissipation and it has a very low on-resistance.
The SUP85N04-03-E3 is a power MOSFET which has a variety of uses. It is mainly used for switching and/or amplitude modulation which automatically and quickly switch the voltage from small to large, or from large to small, in order to achieve higher performance and efficiency. It can also be used as an RF signal amplifier, as well as for power conversion and driving applications. Additionally, it can be used for power supply systems, protection circuits, switching power converters and other applications.
The working principle of the SUP85N04-03-E3 is basically the same as that of any other MOSFET. It is a voltage-controlled device which works by using the electric field created by the change in the capacitor’s voltage to control current flow. When the gate voltage is applied, electrons will accumulate at the gate insulator and they will form an electric field that will pull in more electrons from the source. This current flow is then changed by varying the gate voltage, and thus the voltage across the drain and source terminals can be controlled.
The SUP85N04-03-E3 is suitable for many different applications including motor speed control, audio amplifiers, motor protection, automotive electronics, DC-DC converters, switch mode power supplies, and in power tools. Due to its low on-resistance, it provides superior performance in comparison to other power MOSFETs. It offers improved reliability as well as low power losses, which makes it a very desirable choice for these applications.
In conclusion, the SUP85N04-03-E3 is a dual-channel N-channel enhancement mode MOS FET which has a low on-resistance and is suitable for a variety of applications including motor speed control, audio amplifiers, motor protection, automotive electronics, and DC-DC converters. It works by using the electric field created by the change in the capacitor’s voltage to control current flow, and it offers improved reliability as well as low power losses. It is a very reliable and efficient power MOSFET which is why it is a very popular choice for these types of applications.
The specific data is subject to PDF, and the above content is for reference
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