SUP85N15-21-E3

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The SUP85N15-21-E3 is an enhancement-type N-channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). It is developed by Toshiba and is used in a wide range of electronic applications such as power switch and amplifier, automotive and telecommunications industries, lighting, industrial and consumer applications.

MOSFETs are voltage-controlled transistors that are commonly used in power converter, switch and amplifier circuits. They are the most important type of field effect transistors, with low "on" resistance and high performance operations.

Application Field

The SUP85N15-21-E3 is a package type device that is designed for use in a wide range of applications. It can handle up to 175 watt of power at currents up to 21 Amps. It has low on-resistance and operates with a breakdown voltage of 600V.

The device is designed for use in switching power supplies, DC-DC converters, HVAC, automotive, and telecommunications applications. It is also used in lighting, industrial and consumer applications such as video and audio equipment, motors, high-power lighting and in OEM products.

Working Principle

When a positive voltage is applied to the gate terminal of the MOSFET, the channel region between two ohmic regions of the MOSFET conducts current. This is called inversion because the interface states between two regions change from depletion to inversion mode. By applying the appropriate voltage to the gate terminal of the device, the current between the source and drain terminals can be adjusted very precisely.

The device works by controlling the current flow between its source and drain terminals. The current flow is controlled by the voltage applied to the gate terminal. The higher the voltage applied to the gate, the larger the current that can flow through the MOSFET. The current flow is limited by the device\'s internal capacitance and drain-to-source resistance. This allows a high degree of fine control over the current flow through the MOSFET.

The voltage applied to the gate of the device will not affect the current flow between the source and drain terminals unless it is greater than the threshold voltage of the device. The device works as an on/off switch with a low\' on\' resistance, allowing low power consumption and providing high performance operations.

Conclusion

The SUP85N15-21-E3 is a type of MOSFET device developed by Toshiba that is used in a variety of applications ranging from automotive and telecommunications to lighting, industrial and consumer applications. The device works by controlling the current flow between its source and drain terminals, allowing a high degree of fine control over the current flow. It has a low\' on\' resistance and is suitable for use in power switch and amplifier circuits.

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