SUP85N10-10-E3

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SUP85N10-10-E3 is a high-performance, low on-state resistance N-channel power MOSFET, suitable for applications in various electric power management and switching applications. It is designed to deliver customers energy-saving applications with high-speed switching and superior reliability. This MOSFET is able to switch with a low on-state resistance and a low thermal resistance package. Its main application fields includes high current power supply and audio/visual, consumer electronics, mobile communication systems, and other systems that require low on-state resistance.

A MOSFET is a type of field-effect transistor which is used to control current flow in a circuit. It is an “unipolar” device, meaning it only consists of one type of carrier. The SUP85N10-10-E3 is a single channel N-type power MOSFET. It contains a drain, gate, and source terminals, and the gate is responsible for controlling the flow of current between the source and drain. That is, when the gate voltage is applied, the switch will turn on.

The working principle behind the SUP85N10-10-E3 is relatively simple. It is made up of a metal-oxide semiconductor (MOS) which is usually an N-type semiconductor material. This MOS can be programmed to turn on or off with an electric field using the gate source. When the gate voltage is applied, the electrons in the oxide layer between the gate and the source will turn on the drain-source conduction path. As a result, a current will flow from the source to the drain.

This MOSFET has a high-frequency switching capability and its gate voltage control is very convenient for applications such as LED drivers and AC/DC converters. Additionally, the SUP85N10-10-E3 has a low on-state resistance, which makes it well suited for high-current power supply applications. It also has a low thermal resistance package which helps it to distribute heat dissipation from power components to the surrounding environment and to remain thermally stable during operation.

In conclusion, the SUP85N10-10-E3 is a high-performance, low on-state resistance N-channel power MOSFET. It is designed to deliver customers energy-saving applications with high-speed switching and superior reliability. Its main application fields include high current power supply, audio/visual, consumer electronics, mobile communication systems and other systems that require low on-state resistance due to its low thermal resistance package and its ability to switch at high frequencies.

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