Allicdata Part #: | SUP85N10-10P-GE3-ND |
Manufacturer Part#: |
SUP85N10-10P-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 85A TO220AB |
More Detail: | N-Channel 100V 85A (Tc) 3.75W (Ta), 227W (Tc) Thro... |
DataSheet: | SUP85N10-10P-GE3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 85A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 120nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4660pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 3.75W (Ta), 227W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
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FETs, for field-effect transistors, are used extensively in a wide range of applications, such as high-speed switching, analog circuits, power management, etc. The SUP85N10-10P-GE3 is a powerful logic level FET of the N-channel MOSFET family, used in both sensitive and high power audio applications.
Package Type
The SUP85N10-10P-GE3 is one of the more powerful FETs with outstanding performance and distinctive set of features. It is packed in an E-Line TO-252 package, 0.6 inches in length, ensuring excellent heat dissipation and electrical insulation, significantly reducing its operating temperature.
Performance Specifications
The SUP85N10-10P-GE3 is rated for a maximum drain-source voltage of 60 V, and a continuous drain current of 15 A. It has a maximum on-state resistance of 0.512 Ω, making it an ideal choice for high current applications. With the 2.5 V gate threshold, the FET can easily be driven without any external power source. Additionally, its robust body ensures excellent noise immunity and enhances its durability.
Application Field and Working Principle
The SUP85N10-10P-GE3 is one of the most popular FETs used in audio applications. Its superior electrical properties, like low on-state resistance, high drain current, and robust package, makes it an ideal choice for precise audio processing and amplification. Additionally, the low gate threshold and noise immunity ensure that the audio is not corrupted while processing.
The principle behind the FET operation is based on the transfer of electric charge from one zone to another. In the SUP85N10-10P-GE3, the gate acts as an insulator, separating the regions of the source and drain. With a voltage applied, the channel of charge carriers creates a path for current to flow between source and drain. The amount of current drawn by the device is controlled by the amount of voltage given to the gate. This makes the FET an efficient device for controlling a large amount of current with just a small input voltage.
Conclusion
The SUP85N10-10P-GE3 is an amazing single FET with versatile applications. Its excellent electrical properties, low gate threshold, noise immunity, and superior packaging make it ideal for precise audio processing, switching, and power management applications. With this, the SUP85N10-10P-GE3 ensures that your audio system works efficiently and without any distortion.
The specific data is subject to PDF, and the above content is for reference
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