TIP32CPWD Allicdata Electronics
Allicdata Part #:

TIP32CPWD-ND

Manufacturer Part#:

TIP32CPWD

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 100V
More Detail: Bipolar (BJT) Transistor
DataSheet: TIP32CPWD datasheetTIP32CPWD Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Description

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TIP32CPWD is a single, complementar, PNP/NPN transistor with a low DC current gain and a high power dissipation. It is commonly used in switching and amplification power applications. The TIP32CPWD is often used in applications where minimum power dissipation and high breakdown voltage is required in an inexpensive, reliable package. The device is well suited for use in high frequency/reading circuitry and switching applications.

The PNP/NPN power transistors have a current gain range from hFE = 6 to hFE = 60. The transistors can dissipate up to 25V with a power dissipation of up to 1W. The PNP/NPN transistors are designed to provide high switching speed while maintaining linearity. The devices are well suited for use in high frequency/reading circuitry and switching applications.

The TIP32CPWD is a popular choice for electric power devices, audio amplifiers, switching circuits, and high voltage DC-DC converters. The device is highly reliable and exhibits low thermal resistance. It provides a low saturation voltage, good current gain, and high switching speed. The base region is designed to provide high current gain and low saturation voltage. The device is capable of operating from -25V to +150V.

The TIP32CPWD is fitted with a standard TO-220 package which provides excellent protection. The package includes a heat sink which dissipates excess heat generated during operation. It is built to withstand the thermal stresses of high power applications and can be easily mounted on a printed circuit board. The well-designed package provides excellent high frequency characteristics and heat dissipation.

The working principle of the TIP32CPWD involves two transistors which are connected in parallel. The base of one of the transistors acts as an input terminal, while the collector of the other serves as an output terminal. The transistors are connected in common emitter configuration. When a small amount of current is applied to the base of one of the transistors, it will turn on and allow current to flow through the circuit. The current then flows in the same direction in both transistors. This creates an amplified voltage at the output terminal.

The TIP32CPWD offers a wide range of power dissipation and low thermal resistance. It is an ideal device for use in applications where low power dissipation and high breakdown voltage is required. Its high frequency characteristics make it suitable for use in high frequency/speed circuits and switching applications. The device is highly reliable and has a long lifetime, making it an ideal choice for industrial power applications.

The specific data is subject to PDF, and the above content is for reference

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