Allicdata Part #: | TIP33-S-ND |
Manufacturer Part#: |
TIP33-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS NPN 40V 10A |
More Detail: | Bipolar (BJT) Transistor NPN 40V 10A 3.5W Through... |
DataSheet: | TIP33-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 4V @ 2.5A, 10A |
Current - Collector Cutoff (Max): | 700µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 3A, 4V |
Power - Max: | 3.5W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-218-3 |
Supplier Device Package: | SOT-93 |
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TIP33, belonging to the bipolar junction transistors (BJT) single kind, is a general purpose bipolar NPN power transistor with high current capacity. It is designed for power switching circuits and amplifier applications, with a maximum collector current capability of 13A and a maximum power dissipation of 75W.
Application field
TIP33 is mainly used in audio, power supplies, linear and switching applications, including switching regulators, DC-DC converters, inverters, solenoids, and relay drivers. It is also suitable for use in low power audio amplifiers, high speed oscillators, linear amplifiers, and high frequency converters.
The TIP33 has an inherently low junction capacitance, making it an ideal choice for low power portable applications. In audio applications, it is commonly used as a driver stage when driving a speaker in a low power audio amplifier. Additionally, it can be used as an input stage in low frequency oscillator circuits, and as a linear driver amplifier in high frequency converters.
Working Principle
A normal BJT consists of three terminals: a base, a collector, and an emitter. The TIP33 is an NPN transistor, which means electrons flow from the collector to the emitter. The base is connected to a DC voltage source, which is used to control the release and flow of electrons between the collector and emitter. When the base-emitter junction is forward biased, electrons are injected into the base region and are then drawn away towards the collector side due to the repulsion force. This initiates the flow of current from the collector to the emitter. In this way, the electric current is controlled by the base voltage.
The TIP33 is designed to be able to handle high current with low saturation voltage losses, due to its inherently low junction capacitance. It also has excellent power dissipation and ruggedness, making it ideal for use in modern high-power devices. Additionally, it has a high gain-bandwidth product, which makes it usable in high-frequency applications.
In conclusion, the TIP33 is a versatile power switching transistor that is suitable for a wide range of applications, from powering low power audio amplifiers to complex high frequency converters. It is designed with a low junction capacitance to handle high currents with low losses and has excellent power dissipation and ruggedness.
The specific data is subject to PDF, and the above content is for reference
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