TIP30 Allicdata Electronics

TIP30 Discrete Semiconductor Products

Allicdata Part #:

TIP30CS-ND

Manufacturer Part#:

TIP30

Price: $ 0.40
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: THROUGH-HOLE TRANSISTOR-BIPOLAR
More Detail: Bipolar (BJT) Transistor PNP 40V 1A 3MHz 30W Throu...
DataSheet: TIP30 datasheetTIP30 Datasheet/PDF
Quantity: 1000
1600 +: $ 0.35721
Stock 1000Can Ship Immediately
$ 0.4
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 4V
Power - Max: 30W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Description

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The TIP30 is a medium power silicon NPN bipolar junction transistor commonly used for low-frequency power amplifier and switching applications. It is packaged in a TO-220 package for easy handling and heat dissipation. This transistor has a collector current of 15 A and a collector-emitter voltage of 50 V. It is available in both PNP and NPN configurations. A TIP30 can be used in a wide range of applications including load switching, relay and motor drive, signal processing, and interface logic applications.

A bipolar junction transistor (BJT) consists of three layers of semiconductor material, each with its own doping type. The middle layer is known as the base and it is the region through which current flows. The other two layers are known as emitter and collector. In a BJT, electrons and holes flow in opposite directions and in the reverse direction of conventional currents. The BJT can be configured in either PNP or NPN form.

In PNP configuration, the base layer is doped with acceptors and the emitter and collector are doped with donors. In NPN configuration, the base layer is doped with donors and the emitter and collector are doped with acceptors. In both configurations, they act as a current controlling device, with current flow controlled by the bias voltage applied to the base. This is known as the “common emitter” configuration.

The working principle of the TIP30 is based on the transistor’s “common emitter” configuration. In the NPN configuration of the TIP30, current flows from the collector to the emitter when a forward bias voltage is applied to the base. This allows current to flow from the collector to the emitter and hence from the collector to the external load. The amount of current that flows from the collector to the emitter is determined by the magnitude of the base voltage.

The TIP30 can be used for both low-frequency power amplifier and switching applications. In amplifier applications, the transistor can be used as an amplifier, the output being a voltage amplified version of the input. In switching applications, it can be used as a switch in order to switch between different logic levels. The TIP30 provides excellent performance in both these applications with a high breakdown voltage and low saturation voltage.

The TIP30 is a medium power bipolar junction transistor which is suitable for a wide range of applications. It has a good breakdown voltage, low saturation voltage, and excellent gain performance making it ideal for both low-frequency power amplifier and switching applications. With its easy handling and excellent performance, the TIP30 has become an essential tool in many circuits and applications.

The specific data is subject to PDF, and the above content is for reference

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