Allicdata Part #: | TIP30B-S-ND |
Manufacturer Part#: |
TIP30B-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS PNP 80V 1A |
More Detail: | Bipolar (BJT) Transistor PNP 80V 1A 2W Through Ho... |
DataSheet: | TIP30B-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 700mV @ 125mA, 1A |
Current - Collector Cutoff (Max): | 300µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 1A, 4V |
Power - Max: | 2W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
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Bipolar Junction Transistors, or BJTs, are widely used in the electronics industry for their strong gain and wide bandwidth capabilities. The TIP30B-S is a popular example of a PNP Bipolar Junction Transistor (BJT). This device is capable of operating at up to 35 volts, making it an ideal choice for amplifying and switching applications. In this article, we will discuss the main application fields and working principle of the TIP30B-S.
Application fields
The TIP30B-S is a highly versatile device with a wide range of applications, including audio amplifiers, logic-level switching circuits, and automotive applications. It is also suitable for switching applications such as relays, solenoids and motor control circuits.
Due to its high gain and wide bandwidth capabilities, the TIP30B-S is particularly suitable for use in linear amplification circuits. It is commonly used in frequency-dependent applications such as filters, oscillators, and timers. Additionally, the device is highly stable and reliable, making it an ideal choice for use in industrial, automotive and avionic applications.
The TIP30B-S is also suitable for use in low power switching circuits. Due to its capability for operating at very low voltages, it is often used for logic-level switching circuits. Additionally, its low power losses make it an ideal choice for solving low power problems in applications such as power converters and battery-powered circuits.
Working Principle
The TIP30B-S is a PNP Bipolar Junction Transistor (BJT) with three terminals: the collector, the base and the emitter. Current gain is primarily determined by the ratio of the collector current to the base current, which is known as the common-emitter current gain, or hFE. The base and emitter are forward biased, while the collector is reverse biased.
When a voltage is applied to the base, it increases the number of electrons at the base junction. This, in turn, increases the number of electrons available in the emitter. As the emitter-collector voltage decreases, the number of electrons in the collector decreases, resulting in an overall current flow from the emitter to the collector. This is known as the collector current, and it determines the gain of the transistor.
The TIP30B-S is able to operate over an extremely wide range of voltages and currents, which makes it an ideal choice for many applications. Additionally, its high current gain and low power requirements make it highly efficient and reliable. As such, it is an excellent choice for many PNP BJT applications.
The specific data is subject to PDF, and the above content is for reference
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