TIP36B SL

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	PNP
Current - Collector (Ic) (Max):	25A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	--
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	10 @ 15A, 4V
Power - Max:	125W
Frequency - Transition:	3MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-218-3
Supplier Device Package:	TO-218

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The TIP36B is a silicon epitaxial-base power transistor which belongs to the single bipolar junction transistor (BJT) family. It has a very wide application in a variety of power devices.It is made of a NPN silicon epitaxial planar structure for operation in the epitaxial base region. It is a medium power unipolar device and has a collector-base voltage rating of 55 V, with a maximum continuous collector current from 5 A to 10 A depending on ambient temperature. The TIP36B has an operating temperature ranging from -55°C to +150°C.The TIP36B is typically used in the following devices: switching applications, automatic systems, very low voltage circuits and current sources. It is especially suitable for use in low voltage applications such as automotive, small signal and power amplifier applications, series switching regulators and load switching.The working principle of the TIP36B is as follows: when a voltage is applied across its base-emitter junction, electrons are injected into the base region, forming a base current. This base current, combined with the collector current, flow through the collector-emitter junction and generate a collector-emitter voltage. This collector-emitter voltage is used to control the collector current, thus regulating the base current, and hence, the collector-emitter voltage.The structure of the TIP36B consists of a collector, an emitter, and a base. The collector is connected to some kind of an electrical circuit that supplies power, also known as a "load". The base is connected to a control circuit that provides a base current to the transistor, which in turn controls the collector current. The emitter is connected to ground.When the transistor is in the on state, then, a small amount of base current will flow into the base junction, inducing a large amount of collector current that will flow out of the collector. When the transistor is in the off state, then, there is no base current and therefore, the collector current is zero.The collector-emitter voltage, denoted by VCE, is the voltage drop between the collector and the emitter terminals. This voltage varies with temperature and the collector current, and is typically around 5 volts for the TIP36B.The TIP36B has several advantages when compared to other power transistors. It has a low on-state voltage drop and a low driving power requirement, which make it suitable for use in space-constrained applications such as low voltage regulators. It is also highly reliable, with a very long switching life and low thermal resistance. Furthermore, the TIP36B has a very low profile and can easily be embedded in circuit boards.In conclusion, the TIP36B is a versatile power transistor and can be used in various applications, from switching systems to low voltage regulators. It features a wide power range, high reliability and a low on-state voltage drop, making it an attractive choice for a variety of electronic applications.

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