TIP33A-S

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TIP33A-S is a high-power, high-gain, NPN silicon transistor that belongs to the Single Bipolar (BJT) Transistor family. It is designed specifically for use in power amplifier circuits and power switching circuits operating at collector currents of up to 3A and with collector-emitter voltages of up to 30V

The TIP33A-S is a "general-purpose" transistor, meaning it has a wide range of applications. In low-frequency applications, it can be used in power-on switching circuits, relay circuits, and also in linear amplifiers. In high-frequency applications, it can be used in switching converter circuits, motor control circuits, and also in RF amplifier circuits.

The TIP33A-S is composed of three terminals. The emitter terminal of the transistor is joined to the collector terminal. This means that when a current is applied to the collector terminal, a voltage will result between the collector and emitter terminals. The base terminal is the input control terminal. When a positive voltage is applied to the base terminal, a current is allowed to flow from the collector to the emitter.

At DC, the operation of the TIP33A-S is best understood by studying its DC equivalent circuit, which is represented in Figure 1. As can be seen, the transistor is composed of two current sources, an NPN current source I_Bn and a PNP current source I_Bp, connected in parallel to the collector. The current source I_Bn is responsible for controlling the collector current. This current source is controlled by the base-emitter voltage and is also referred to as the "DC current gain". The current source I_Bp is responsible for controlling the collector-emitter voltage and is also referred to as the "voltage gain". The current source I_Bp is controlled by the base-emitter voltage.

At AC, the operation of the TIP33A-S can be analyzed by considering its small-signal equivalent circuit, which is represented in Figure 2. As seen from the equivalent circuit, the transistor can be viewed as a two-port device with an input and an output. The input is the base terminal and the output is the collector terminal. This two-port device can then be used to describe the operating characteristics of the transistor. The operating characteristics are defined in terms of the voltages and currents at the base and collector terminals with respect to each other.

For the TIP33A-S, the input/output characteristics can be described as follows: the voltage gain (V_ce/V_be) is approximately 100; the current gain (I_c/I_b) is approximately 40; the input impedance (R_in) is approximately 150; and the output impedance (R_out) is approximately 5. As a result, the TIP33A-S can be used in a wide range of applications where high currents and/or voltages are required.

Overall, the TIP33A-S is a high-power, high-gain NPN silicon transistor designed specifically for use in power amplifier circuits and power switching circuits. The operating characteristics of the transistor make it ideal for use in a wide range of applications ranging from low frequency applications to high frequency applications.

The specific data is subject to PDF, and the above content is for reference