Allicdata Part #: | TIP32B-S-ND |
Manufacturer Part#: |
TIP32B-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS PNP 80V 3A |
More Detail: | Bipolar (BJT) Transistor PNP 80V 3A 40W Through H... |
DataSheet: | TIP32B-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 375mA, 3A |
Current - Collector Cutoff (Max): | 300µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 3A, 4V |
Power - Max: | 40W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
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The TIP32B-S is a high-voltage, high-current PNP silicon power transistor, manufactured by STMicroelectronics. It is a part of the company\'s BiMOS II series, and is designed for use in amplifier applications, switch-mode power supplies, and other power management applications. The TIP32B-S is available in a TO-220 package and features a maximum collector-emitter voltage of 450 volts, a maximum collector current of 2.5 amps, and a maximum power dissipation of 2 watts. The TIP32B-S is a bipolar junction transistor (BJT), meaning that it is constructed of two n-type and one p-type layer, forming the collector, emitter, and base regions.
The TIP32B-S is particularly suited for applications in which a wide range of high voltages and high currents are required. It has an on-resistance rating of 1.3 ohm and a maximum breakdown voltage of up to 700 volts. This makes it well-suited for use in high-power amplifiers and switch-mode power supplies. The TIP32B-S is available in both TO-220 and compact TO-220FP packages.
The transistor works on the principle of amplification, meaning that it amplifies a small electrical current in order to control a larger one. The TIP32B-S uses two PNP junction transistors connected together, known as a Darlington pair, which can be used to increase the chip\'s gain. The two transistors are interconnected so that the collector current of the first transistor is amplified by the second, thereby increasing its output power. The TIP32B-S is also capable of high-frequency operation due to its low on-resistance and low off-state voltage. This makes it well-suited for use in high-frequency applications such as radio frequency power amplifier circuits.
The TIP32B-S can be used in a wide range of applications, including power supplies, DC motor control, HVAC, industrial control systems, switching power supplies, and more. Its simple structure makes it a popular choice for many applications, as it is relatively straightforward to use. Its high current capabilities also make it well-suited for use in high-power devices, such as amplifiers, or in circuits that require high-voltage switching.
In summary, the TIP32B-S is a high-voltage, high-current PNP silicon power transistor, designed for use in amplifier applications, switch-mode power supplies, and other power management applications. It has an on-resistance rating of 1.3 ohm and a maximum breakdown voltage of up to 700 volts, making it well-suited for use in high-power amplifiers and switch-mode power supplies. Its simple structure, high current capabilities, and ability to operate at high frequencies make it a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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