Allicdata Part #: | TP0604N3-G-ND |
Manufacturer Part#: |
TP0604N3-G |
Price: | $ 0.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET P-CH 40V 430MA TO92-3 |
More Detail: | P-Channel 40V 430mA (Tj) 740mW (Ta) Through Hole T... |
DataSheet: | TP0604N3-G Datasheet/PDF |
Quantity: | 965 |
1 +: | $ 0.78750 |
25 +: | $ 0.65545 |
100 +: | $ 0.59699 |
Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 740mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 20V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 430mA (Tj) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Bulk |
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The TP0604N3-G is an enhancement-mode field-effect transistor (FET) fabricated using MOSFET technology. It is specifically designed to operate in low voltage, high current applications and is capable of providing an exceptionally low on-resistance rating. As an enhancement-mode device, it can efficiently switch between high- and low-state gain conditions, making it suitable for a variety of applications.
One of the most popular applications for the TP0604N3-G is DC motor control. The exceptional low on-resistance rating of the device allows it to drive currents up to 500mA – enough to power most DC motors. The high gain of the device also makes it suitable for use in pulse-width-modulation (PWM) circuits that are often utilized in speed and position control circuits for DC motors. Additionally, the device is particularly suited for use in audio amplifiers and power supplies, where its efficient switching can help reduce current leakage, improve efficiency, and reduce operating temperature.
The device is also used to control power in other electronic systems, including battery charger circuits, LED systems, and power converters. Its ability to switch quickly between high and low states also makes it useful for signal control applications such as gate drivers and logic level shifters.
The TP0604N3-G is a simple device to operate, making it ideal for applications requiring low-power usage, low complexity, and a low cost. The device itself consists of a channel which is controlled by a gate electrode. When a voltage is applied to the gate electrode, the channel opens or closes, allowing or blocking current flow through the device. This simple technology allows the device to be used in many applications, and its remarkably low on-resistance makes it especially useful for high current needs.
The device is constructed using two-terminal insulation-gate bi-parallel (IGBT)-based technology, which is known for its low power consumption, low gate driving voltage, and excellent thermal performance. The device is designed to be used in a variety of operating conditions, including automotive, industrial, and consumer device applications. In addition, its wide input voltage range and low threshold voltage make it suitable for use in low voltage, low noise operations.
Overall, the TP0604N3-G is a versatile and reliable enhancement-mode field-effect transistor. Its low on-resistance rating and wide range of applications make it ideal for use in DC motor control, audio amplifiers, power supplies, and other high current, low power consumption needs. Its simple construction and low gate driving voltage make it easy to operate, while its IGBT-based technology ensures excellent thermal performance. With its combination of features and benefits, the TP0604N3-G is an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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