TP0604N3-G Allicdata Electronics
Allicdata Part #:

TP0604N3-G-ND

Manufacturer Part#:

TP0604N3-G

Price: $ 0.87
Product Category:

Discrete Semiconductor Products

Manufacturer: Microchip Technology
Short Description: MOSFET P-CH 40V 430MA TO92-3
More Detail: P-Channel 40V 430mA (Tj) 740mW (Ta) Through Hole T...
DataSheet: TP0604N3-G datasheetTP0604N3-G Datasheet/PDF
Quantity: 965
1 +: $ 0.78750
25 +: $ 0.65545
100 +: $ 0.59699
Stock 965Can Ship Immediately
$ 0.87
Specifications
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 740mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 430mA (Tj)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Bulk 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TP0604N3-G is an enhancement-mode field-effect transistor (FET) fabricated using MOSFET technology. It is specifically designed to operate in low voltage, high current applications and is capable of providing an exceptionally low on-resistance rating. As an enhancement-mode device, it can efficiently switch between high- and low-state gain conditions, making it suitable for a variety of applications.

One of the most popular applications for the TP0604N3-G is DC motor control. The exceptional low on-resistance rating of the device allows it to drive currents up to 500mA – enough to power most DC motors. The high gain of the device also makes it suitable for use in pulse-width-modulation (PWM) circuits that are often utilized in speed and position control circuits for DC motors. Additionally, the device is particularly suited for use in audio amplifiers and power supplies, where its efficient switching can help reduce current leakage, improve efficiency, and reduce operating temperature.

The device is also used to control power in other electronic systems, including battery charger circuits, LED systems, and power converters. Its ability to switch quickly between high and low states also makes it useful for signal control applications such as gate drivers and logic level shifters.

The TP0604N3-G is a simple device to operate, making it ideal for applications requiring low-power usage, low complexity, and a low cost. The device itself consists of a channel which is controlled by a gate electrode. When a voltage is applied to the gate electrode, the channel opens or closes, allowing or blocking current flow through the device. This simple technology allows the device to be used in many applications, and its remarkably low on-resistance makes it especially useful for high current needs.

The device is constructed using two-terminal insulation-gate bi-parallel (IGBT)-based technology, which is known for its low power consumption, low gate driving voltage, and excellent thermal performance. The device is designed to be used in a variety of operating conditions, including automotive, industrial, and consumer device applications. In addition, its wide input voltage range and low threshold voltage make it suitable for use in low voltage, low noise operations.

Overall, the TP0604N3-G is a versatile and reliable enhancement-mode field-effect transistor. Its low on-resistance rating and wide range of applications make it ideal for use in DC motor control, audio amplifiers, power supplies, and other high current, low power consumption needs. Its simple construction and low gate driving voltage make it easy to operate, while its IGBT-based technology ensures excellent thermal performance. With its combination of features and benefits, the TP0604N3-G is an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "TP06" Included word is 14
Part Number Manufacturer Price Quantity Description
TP0620N3-G Microchip Te... -- 603 MOSFET P-CH 200V 0.175A T...
TP0610K-T1 Vishay Silic... -- 1000 MOSFET P-CH 60V 185MA SOT...
TP0610KL-TR1-E3 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 60V 270MA TO9...
PFB0412EHN-TP06 Delta Electr... 12.57 $ 1271 FAN AXIAL 40X28MM 12VDC W...
TP0610K-T1-E3 Vishay Silic... -- 1000 MOSFET P-CH 60V 185MA SOT...
TP0610K-T1-GE3 Vishay Silic... -- 1000 MOSFET P-CH 60V 185MA TO-...
TP0610T-G Microchip Te... -- 6000 MOSFET P-CH 60V 0.12A SOT...
TP0604N3-G Microchip Te... 0.87 $ 965 MOSFET P-CH 40V 430MA TO9...
TP0606N3-G Microchip Te... -- 1337 MOSFET P-CH 60V 320MA TO9...
TP0601800000G Amphenol Any... 0.69 $ 1000 500 TB RIS CLA 35D STACK6...
A-TB500-TP06 ASSMANN WSW ... 0.98 $ 1000 TERMINAL BLOCK6 Position ...
A-TB508-TP06 ASSMANN WSW ... 1.25 $ 1000 TERMINAL BLOCK6 Position ...
TP0606N3-G-P002 Microchip Te... 0.49 $ 1000 MOSFET P-CH 60V 320MA TO9...
TP0606N3-G-P003 Microchip Te... 0.49 $ 1000 MOSFET P-CH 60V 320MA TO9...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics