TP0606N3-G-P003

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	320mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	3.5 Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id:	2.4V @ 1mA
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	150pF @ 25V
FET Feature:	--
Power Dissipation (Max):	1W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-92-3
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)

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Introduction

The TP0606N3-G-P003 is a Single N-Channel Enhancement Mode Field Effect Transistor (MOSFET) designed for switching applications. It is optimized to decrease power dissipation and reduce Rdson in order to improve the performance of the application.

Application Field

The TP0606N3-G-P003 is suitable for audio amplification, battery switches, general switches and logic gates. Additionally, it can be used for automotive navigation systems, medical equipment, wireless receivers, signal transmission and power management in hard disk recorders and laptop computers.

Working Principle

The TP0606N3-G-P003 works on the principle of electrical control; in essence, a gate voltage is applied to the MOSFET to control the flow of current between the drain and source. When a gate voltage is applied to the MOSFET, the current from the drain to the source increases, thus allowing the MOSFET to switch on.The gate voltage of the TP0606N3-G-P003 varies depending on the load, ranging from -12Vd to 12Vd and can be controlled with a resistance of 0.25Ω maximum. The device also has a wide operating temperature range (-55°C to 150°C) and a high current rating up to 3.3A.

Advantages

The TP0606N3-G-P003 offers a number of advantages, such as improved switching performance with low on-resistance, high drain current capability and excellent electro-magnetic interference (EMI) performance.The component also has a low gate charge for reduced switching losses and improved efficiency, as well as a high voltage rating (30V), which makes it suitable for many applications.In addition, the TP0606N3-G-P003 is available in many packages, such as SOT-223 and SOP-8, which provides flexibility for designers to choose the size and shape of a component to best suit the application.

Conclusion

The TP0606N3-G-P003 is a versatile field effect transistor (MOSFET) designed for switching applications. With its low on-resistance and wide operating temperature range, it provides satisfactory performance in electrically controlled systems. Moreover, its high voltage rating and various available packages make it an optimal choice for automotive navigation systems, medical equipment and wireless receivers. In conclusion, the TP0606N3-G-P003 MOSFET is a powerful and efficient device that can enhance the performance of various applications.

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