TP0606N3-G-P002 Allicdata Electronics
Allicdata Part #:

TP0606N3-G-P002-ND

Manufacturer Part#:

TP0606N3-G-P002

Price: $ 0.49
Product Category:

Discrete Semiconductor Products

Manufacturer: Microchip Technology
Short Description: MOSFET P-CH 60V 320MA TO92-3
More Detail: P-Channel 60V 320mA (Tj) 1W (Tc) Through Hole TO-9...
DataSheet: TP0606N3-G-P002 datasheetTP0606N3-G-P002 Datasheet/PDF
Quantity: 1000
2000 +: $ 0.44125
Stock 1000Can Ship Immediately
$ 0.49
Specifications
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 750mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The TP0606N3-G-P002 is a type of semiconductor device and transistors, also known as a Field Effect Transistors (FETs). This type of transistor is used for switches and amplifiers, generally for low power applications where the output is low-power digital, analog signals. As it is a type of FET, this semiconductor device operates utilizing a unique phenomenon of “field-effect”, which allows the transistor to be used as a switch or an amplifier.

In order to fully understand the working principle and application field of the TP0606N3-G-P002, one needs to first understand the basic structure and principles of a FET. A FET is basically a three-terminal non-vanishing, rectifying device. It features a source terminal and a drain terminal, as well as a gate terminal which acts as a controlling element that allows the current flow through the device to be controlled.

Operationally, the TP0606N3-G-P002 is modeled such that the drain-to-source path (or the channel) is blocked by a thin layer of electrically insulating material. This insulating material is referred to as an “insulator” which forms what is known as a “channel”. This is then reversed by the application of a small negative electrical voltage to the gate terminal which will cause electrons to be attracted towards the gate terminal and become trapped forming an “electron-rich” channel when a current flows through the source terminal to the drain terminal.

These particular types of FETs are often used in integrated circuits and power management applications. This is because they are extremely small, yet have a relatively high current carrying capacity and can withstand high voltages without being damaged. Additionally, the design of this type of FET ensures that it is more insulated and results in almost no leakage currents which can result in cross-conduction problems in other types of transistors.

In terms of application fields, the TP0606N3-G-P002 is often used in computing and graphics applications such as graphics accelerators, video cards, and microprocessors. The use of these FETs in graphics applications is owing to their ability to provide a high level of performance at a low voltage and in turn, permit devices to work more efficiently with less power. Additionally, these FETs can also be used in power management applications where they can be used to control and regulate currents and voltages precisely, allowing for better energy efficiency.

In conclusion, the TP0606N3-G-P002 is a type of Field Effect Transistors (FETs) semiconductor device. It typically features a source terminal, drain terminal, and gate terminal which is used to control the current flow through the device. This type of transistor is often used in integrated circuits and power management applications owing to its smaller size, high current carrying capacity and insulation characteristics. Additionally, these FETs are also often used in computing and graphics applications owing to their capability to provide maximum performance at low-voltage levels.

The specific data is subject to PDF, and the above content is for reference

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