TP0606N3-G

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The TP0606N3-G is a power MOSFET commonly used in power electronics applications that require a high current switching solution. It is part of a family of low on-resistance power MOSFETs from Onsemi that feature logic-level gate drive capability, low gate charge, and high current capacity. These characteristics make the TP0606N3-G a reliable and cost-effective choice in many different applications.

Application Field

The TP0606N3-G is designed specifically for DC-DC buck converter applications. It can be used as an on/off switch in applications such as voltage scaling, high-side & low-side switches, PWM speed control, and dimmer circuits. Its broad operating range allows it to function between -55C to +125C junction temperatures, making it suitable for wide temperature range applications.

The TP0606N3-G is also ideal for other applications such as motor control, robotics, medical, sound, and energy storage systems. Its low gate charge, low on-resistance, and high-current capacity all make it an excellent choice for automotive applications. It is heavily used in electric and hybrid vehicles, such as the Tesla Model S, for both low and high side switching.

Working Principle

The TP0606N3-G is a power MOSFET, a type of transistor which uses its gate voltage to control the flow of current between the drain and source pins. This type of transistor operates in a linear mode and is able to switch on and off quickly due to its low on-resistance. When the gate voltage is low, the MOSFET is turned off and no current flows through it. When the gate voltage is high, the MOSFET is turned on, allowing current to flow. The TP0606N3-G also features a logic-level gate drive voltage, meaning that it can be driven with a standard 5V logic signal.

The low on-resistance of the TP0606N3-G means that there is very little resistance between the drain and source pins, resulting in minimal power loss. This makes it an ideal choice for applications such as DC-DC converters, where efficiency and power dissipation are important factors. The MOSFET is also capable of operating at higher temperatures than other transistors, making it suitable for high-temperature applications.

The TP0606N3-G is built using an advanced high-voltage MOSFET process, making it ideal for high power, high voltage applications. It has an extremely high blocking voltage, making it suitable for fast switching, high-current and high-voltage applications. The transistor is also designed to be self-protected, meaning that it is able to react to abnormal conditions in a very short amount of time, protecting the MOSFET from damage.

Conclusion

The TP0606N3-G is a power MOSFET that is ideal for DC-DC buck converter applications and other high-current, high-voltage switching applications. Its low on-resistance, high-current capacity, and logic-level gate drive voltage make it a reliable and cost-effective solution for many different applications. Automotive, motor control, robotics, medical, sound, and energy storage systems all benefit significantly from the capabilities of the TP0606N3-G.

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